Foto | Bezeichnung | Hersteller | Beschreibung |
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NTTFS5116PLTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V Power Dissipation (Max): 3.2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V |
auf Bestellung 4863 Stücke: Lieferzeit 10-14 Tag (e) |
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NUF4310MNTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 9pF Height: 0.031" (0.79mm) Attenuation Value: -25dB @ 800MHz ~ 4GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 185MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 4 |
auf Bestellung 8384 Stücke: Lieferzeit 10-14 Tag (e) |
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NUP4106DR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8pF @ 1MHz Current - Peak Pulse (10/1000µs): 25A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 8-SOIC Unidirectional Channels: 4 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 500W Power Line Protection: Yes |
auf Bestellung 2720 Stücke: Lieferzeit 10-14 Tag (e) |
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NVD6416ANLT4G-VF01 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK-3 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1826 Stücke: Lieferzeit 10-14 Tag (e) |
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NVD6495NLT4G-VF01 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6652 Stücke: Lieferzeit 10-14 Tag (e) |
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NVF3055-100T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVF3055L108T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMD6N04R2G | onsemi |
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Produkt ist nicht verfügbar |
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NVMFS5C450NLWFAFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1850 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C460NLAFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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NVR5124PLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9143 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C06NWFTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
Produkt ist nicht verfügbar |
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NVTFS5C673NLTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTFS5C680NLTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 34395 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR0202PLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17777 Stücke: Lieferzeit 10-14 Tag (e) |
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NZ9F18VST5G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-923 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-923 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
auf Bestellung 6295 Stücke: Lieferzeit 10-14 Tag (e) |
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NZ9F18VT5G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-923 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-923 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
auf Bestellung 8136 Stücke: Lieferzeit 10-14 Tag (e) |
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NZ9F5V6ST5G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-923 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-923 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
auf Bestellung 6963 Stücke: Lieferzeit 10-14 Tag (e) |
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P3PS850BHG-08CR | onsemi |
Description: IC CLK GEN EMI MODULATOR 8-WDFN Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
auf Bestellung 1637 Stücke: Lieferzeit 10-14 Tag (e) |
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PCA9306FMUTAG | onsemi |
![]() Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: 8-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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PCA9535ECDTR2G | onsemi |
![]() Packaging: Cut Tape (CT) Features: POR Package / Case: 24-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain Mounting Type: Surface Mount Interface: I2C, SMBus Number of I/O: 16 Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Clock Frequency: 100 kHz Interrupt Output: Yes Supplier Device Package: 24-TSSOP Current - Output Source/Sink: 25mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 1211 Stücke: Lieferzeit 10-14 Tag (e) |
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PCA9535ECDWR2G | onsemi |
![]() Packaging: Cut Tape (CT) Features: POR Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: Open Drain Mounting Type: Surface Mount Interface: I2C, SMBus Number of I/O: 16 Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Clock Frequency: 100 kHz Interrupt Output: Yes Supplier Device Package: 24-SOIC Current - Output Source/Sink: 25mA Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S1Z1SMB5919BT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Supplier Device Package: SMB Part Status: Active Tolerance: ±5% Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 2 Ohms Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6110 Stücke: Lieferzeit 10-14 Tag (e) |
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S2SA1774G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5637 Stücke: Lieferzeit 10-14 Tag (e) |
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SB05-05P-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 18pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: PCP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 25 V |
Produkt ist nicht verfügbar |
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SBAS16LT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2565 Stücke: Lieferzeit 10-14 Tag (e) |
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SBAT54CWT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 46839 Stücke: Lieferzeit 10-14 Tag (e) |
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SBAV199LT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SBAV70LT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 µA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 143342 Stücke: Lieferzeit 10-14 Tag (e) |
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SBAW56LT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14755 Stücke: Lieferzeit 10-14 Tag (e) |
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SBC817-25LT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7509 Stücke: Lieferzeit 10-14 Tag (e) |
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SBC847BDW1T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10577 Stücke: Lieferzeit 10-14 Tag (e) |
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SBC847CDW1T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 13874 Stücke: Lieferzeit 10-14 Tag (e) |
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SBC847CWT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 55367 Stücke: Lieferzeit 10-14 Tag (e) |
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SBC848BLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 137266 Stücke: Lieferzeit 10-14 Tag (e) |
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SBC856BDW1T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8860 Stücke: Lieferzeit 10-14 Tag (e) |
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SBC857ALT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 164464 Stücke: Lieferzeit 10-14 Tag (e) |
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SBCP53-10T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1803 Stücke: Lieferzeit 10-14 Tag (e) |
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SBCP53T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7827 Stücke: Lieferzeit 10-14 Tag (e) |
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SBCP56T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3805 Stücke: Lieferzeit 10-14 Tag (e) |
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SBCP56T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30749 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRB1545CTT4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBRS8190T3G | onsemi |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBSP52T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6900 Stücke: Lieferzeit 10-14 Tag (e) |
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SCM1293A-04SO | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C Applications: DVI, HDMI Capacitance @ Frequency: 2pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 9.9V (Typ) Power Line Protection: Yes Part Status: Active |
auf Bestellung 45502 Stücke: Lieferzeit 10-14 Tag (e) |
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SDTA114YET1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SDTC114EET1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 5288 Stücke: Lieferzeit 10-14 Tag (e) |
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SDTC114YET1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 69155 Stücke: Lieferzeit 10-14 Tag (e) |
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SESD7L5.0DT5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 0.25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-723 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.4V Voltage - Clamping (Max) @ Ipp: 10.4V Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12189 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBD301LT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9703 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBF4393LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 225 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 70258 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBFJ309LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Current Rating (Amps): 30mA Mounting Type: Surface Mount Configuration: N-Channel Technology: JFET Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Voltage - Rated: 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30497 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBFJ310LT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Current Rating (Amps): 60mA Mounting Type: Surface Mount Configuration: N-Channel Gain: 12dB Technology: JFET Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Voltage - Rated: 25 V Voltage - Test: 10 V Current - Test: 10 mA Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 53781 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBT2369ALT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 225 mW |
auf Bestellung 14804 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBT6427LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 225 mW |
auf Bestellung 28054 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBTA14LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW |
auf Bestellung 30881 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMSD103T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 8322 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMSD701T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 35 V |
auf Bestellung 23971 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMSZ4689ET1G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD123 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
auf Bestellung 214 Stücke: Lieferzeit 10-14 Tag (e) |
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SMUN2111T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 12354 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS5116PLTWG |
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Hersteller: onsemi
Description: MOSFET P-CH 60V 5.7A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
auf Bestellung 4863 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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11+ | 1.69 EUR |
16+ | 1.14 EUR |
100+ | 0.79 EUR |
500+ | 0.63 EUR |
1000+ | 0.54 EUR |
NUF4310MNTAG |
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Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 9pF
Height: 0.031" (0.79mm)
Attenuation Value: -25dB @ 800MHz ~ 4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 185MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 9pF
Height: 0.031" (0.79mm)
Attenuation Value: -25dB @ 800MHz ~ 4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 185MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
auf Bestellung 8384 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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32+ | 0.56 EUR |
38+ | 0.47 EUR |
41+ | 0.43 EUR |
50+ | 0.41 EUR |
100+ | 0.38 EUR |
250+ | 0.35 EUR |
500+ | 0.33 EUR |
1000+ | 0.31 EUR |
NUP4106DR2G |
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Hersteller: onsemi
Description: TVS DIODE 3.3VWM 15VC 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Description: TVS DIODE 3.3VWM 15VC 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 500W
Power Line Protection: Yes
auf Bestellung 2720 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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4+ | 4.8 EUR |
10+ | 4 EUR |
100+ | 3.18 EUR |
500+ | 2.69 EUR |
1000+ | 2.28 EUR |
NVD6416ANLT4G-VF01 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 19A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 19A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1826 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.83 EUR |
12+ | 1.49 EUR |
100+ | 1.16 EUR |
500+ | 0.99 EUR |
1000+ | 0.8 EUR |
NVD6495NLT4G-VF01 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6652 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.15 EUR |
10+ | 2 EUR |
100+ | 1.35 EUR |
500+ | 1.07 EUR |
1000+ | 0.98 EUR |
NVF3055-100T1G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVF3055L108T3G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMD6N04R2G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS5C450NLWFAFT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.35 EUR |
10+ | 2.8 EUR |
100+ | 1.92 EUR |
500+ | 1.54 EUR |
NVMFS5C460NLAFT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.45 EUR |
10+ | 2.03 EUR |
100+ | 1.62 EUR |
500+ | 1.37 EUR |
NVR5124PLT1G |
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Hersteller: onsemi
Description: MOSFET P-CH 60V 1.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 1.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9143 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.76 EUR |
29+ | 0.62 EUR |
100+ | 0.43 EUR |
500+ | 0.33 EUR |
1000+ | 0.29 EUR |
NVTFS4C06NWFTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVTFS5C673NLTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVTFS5C680NLTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 7.82A/20A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 7.82A/20A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 34395 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.15 EUR |
13+ | 1.37 EUR |
100+ | 0.94 EUR |
500+ | 0.73 EUR |
NVTR0202PLT1G |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17777 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 0.62 EUR |
41+ | 0.43 EUR |
100+ | 0.22 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
NZ9F18VST5G |
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Hersteller: onsemi
Description: DIODE ZENER 18V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: DIODE ZENER 18V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 6295 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 0.56 EUR |
46+ | 0.39 EUR |
100+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
2000+ | 0.095 EUR |
NZ9F18VT5G |
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Hersteller: onsemi
Description: DIODE ZENER 18V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: DIODE ZENER 18V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 8136 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.65 EUR |
39+ | 0.45 EUR |
100+ | 0.23 EUR |
500+ | 0.19 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
NZ9F5V6ST5G |
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Hersteller: onsemi
Description: DIODE ZENER 5.6V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-923
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER 5.6V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-923
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
auf Bestellung 6963 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 0.28 EUR |
90+ | 0.2 EUR |
135+ | 0.13 EUR |
500+ | 0.1 EUR |
1000+ | 0.09 EUR |
2000+ | 0.081 EUR |
P3PS850BHG-08CR |
Hersteller: onsemi
Description: IC CLK GEN EMI MODULATOR 8-WDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC CLK GEN EMI MODULATOR 8-WDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 1637 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.68 EUR |
10+ | 2.4 EUR |
25+ | 2.27 EUR |
100+ | 1.87 EUR |
250+ | 1.75 EUR |
500+ | 1.54 EUR |
1000+ | 1.22 EUR |
PCA9306FMUTAG |
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Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCA9535ECDTR2G |
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Hersteller: onsemi
Description: IC XPND 100KHZ I2C SMBUS 24TSSOP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPND 100KHZ I2C SMBUS 24TSSOP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1211 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.47 EUR |
10+ | 5.62 EUR |
25+ | 4.91 EUR |
100+ | 4.12 EUR |
250+ | 3.74 EUR |
500+ | 3.51 EUR |
1000+ | 3.32 EUR |
PCA9535ECDWR2G |
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Hersteller: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-SOIC
Current - Output Source/Sink: 25mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-SOIC
Current - Output Source/Sink: 25mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S1Z1SMB5919BT3G |
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Hersteller: onsemi
Description: DIODE ZENER 5.6V 3W SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Supplier Device Package: SMB
Part Status: Active
Tolerance: ±5%
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 3W SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Supplier Device Package: SMB
Part Status: Active
Tolerance: ±5%
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6110 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.9 EUR |
22+ | 0.81 EUR |
100+ | 0.6 EUR |
500+ | 0.5 EUR |
1000+ | 0.45 EUR |
S2SA1774G |
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Hersteller: onsemi
Description: TRANS PNP 50V 0.1A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.1A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5637 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
55+ | 0.32 EUR |
100+ | 0.2 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
SB05-05P-TD-E |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 500MA PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Description: DIODE SCHOTTKY 50V 500MA PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBAS16LT3G |
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Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2565 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.16 EUR |
154+ | 0.11 EUR |
185+ | 0.096 EUR |
500+ | 0.067 EUR |
1000+ | 0.054 EUR |
2000+ | 0.05 EUR |
SBAT54CWT1G |
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Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 46839 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
50+ | 0.35 EUR |
100+ | 0.25 EUR |
500+ | 0.21 EUR |
1000+ | 0.19 EUR |
SBAV199LT3G |
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Hersteller: onsemi
Description: DIODE ARRAY GP 70V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 70V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBAV70LT3G |
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Hersteller: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 143342 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.23 EUR |
124+ | 0.14 EUR |
199+ | 0.089 EUR |
500+ | 0.064 EUR |
1000+ | 0.056 EUR |
2000+ | 0.05 EUR |
5000+ | 0.042 EUR |
SBAW56LT3G |
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Hersteller: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14755 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.18 EUR |
150+ | 0.12 EUR |
172+ | 0.1 EUR |
500+ | 0.072 EUR |
1000+ | 0.056 EUR |
2000+ | 0.055 EUR |
5000+ | 0.046 EUR |
SBC817-25LT3G |
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Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7509 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.35 EUR |
83+ | 0.21 EUR |
134+ | 0.13 EUR |
500+ | 0.097 EUR |
1000+ | 0.085 EUR |
2000+ | 0.075 EUR |
5000+ | 0.065 EUR |
SBC847BDW1T3G |
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Hersteller: onsemi
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10577 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 0.44 EUR |
66+ | 0.27 EUR |
106+ | 0.17 EUR |
500+ | 0.12 EUR |
1000+ | 0.11 EUR |
2000+ | 0.096 EUR |
5000+ | 0.083 EUR |
SBC847CDW1T1G |
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Hersteller: onsemi
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13874 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 0.33 EUR |
87+ | 0.2 EUR |
140+ | 0.13 EUR |
500+ | 0.093 EUR |
1000+ | 0.081 EUR |
SBC847CWT1G |
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Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 55367 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 0.3 EUR |
98+ | 0.18 EUR |
158+ | 0.11 EUR |
500+ | 0.081 EUR |
1000+ | 0.071 EUR |
SBC848BLT1G |
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Hersteller: onsemi
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 137266 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.23 EUR |
124+ | 0.14 EUR |
199+ | 0.089 EUR |
500+ | 0.064 EUR |
1000+ | 0.056 EUR |
SBC856BDW1T3G |
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Hersteller: onsemi
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8860 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 0.39 EUR |
75+ | 0.24 EUR |
120+ | 0.15 EUR |
500+ | 0.11 EUR |
1000+ | 0.095 EUR |
2000+ | 0.084 EUR |
5000+ | 0.073 EUR |
SBC857ALT1G |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 164464 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 0.44 EUR |
66+ | 0.27 EUR |
106+ | 0.17 EUR |
500+ | 0.12 EUR |
1000+ | 0.11 EUR |
SBCP53-10T1G |
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Hersteller: onsemi
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1803 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.09 EUR |
26+ | 0.68 EUR |
100+ | 0.44 EUR |
500+ | 0.33 EUR |
SBCP53T1G |
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Hersteller: onsemi
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7827 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.09 EUR |
26+ | 0.68 EUR |
100+ | 0.44 EUR |
500+ | 0.33 EUR |
SBCP56T1G |
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Hersteller: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3805 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.07 EUR |
27+ | 0.66 EUR |
100+ | 0.43 EUR |
500+ | 0.32 EUR |
SBCP56T3G |
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Hersteller: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30749 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.07 EUR |
27+ | 0.66 EUR |
100+ | 0.43 EUR |
500+ | 0.32 EUR |
1000+ | 0.29 EUR |
2000+ | 0.26 EUR |
SBRB1545CTT4G |
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Hersteller: onsemi
Description: DIODE ARRAY SCHOT 45V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE ARRAY SCHOT 45V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRS8190T3G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 90V 1A SMB
Description: DIODE SCHOTTKY 90V 1A SMB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBSP52T1G |
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Hersteller: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.23 EUR |
24+ | 0.76 EUR |
100+ | 0.49 EUR |
500+ | 0.37 EUR |
SCM1293A-04SO |
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Hersteller: onsemi
Description: TVS DIODE 9.9VC SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C
Applications: DVI, HDMI
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 9.9VC SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C
Applications: DVI, HDMI
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Active
auf Bestellung 45502 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.19 EUR |
141+ | 0.12 EUR |
237+ | 0.074 EUR |
500+ | 0.07 EUR |
SDTA114YET1G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SDTC114EET1G |
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Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5288 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 0.3 EUR |
100+ | 0.18 EUR |
160+ | 0.11 EUR |
500+ | 0.08 EUR |
1000+ | 0.071 EUR |
SDTC114YET1G |
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Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 69155 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 0.32 EUR |
91+ | 0.19 EUR |
147+ | 0.12 EUR |
500+ | 0.087 EUR |
1000+ | 0.077 EUR |
SESD7L5.0DT5G |
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Hersteller: onsemi
Description: TVS DIODE 5VWM 10.4VC SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.4V
Voltage - Clamping (Max) @ Ipp: 10.4V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 10.4VC SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.4V
Voltage - Clamping (Max) @ Ipp: 10.4V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12189 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 1.27 EUR |
19+ | 0.95 EUR |
100+ | 0.71 EUR |
500+ | 0.57 EUR |
1000+ | 0.48 EUR |
SMMBD301LT3G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Qualification: AEC-Q101
auf Bestellung 9703 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 0.86 EUR |
34+ | 0.53 EUR |
100+ | 0.33 EUR |
500+ | 0.25 EUR |
1000+ | 0.22 EUR |
2000+ | 0.2 EUR |
5000+ | 0.18 EUR |
SMMBF4393LT1G |
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Hersteller: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: JFET N-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 70258 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.97 EUR |
24+ | 0.74 EUR |
100+ | 0.54 EUR |
500+ | 0.41 EUR |
1000+ | 0.35 EUR |
SMMBFJ309LT1G |
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Hersteller: onsemi
Description: RF MOSFET JFET 25V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: RF MOSFET JFET 25V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30497 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 0.44 EUR |
59+ | 0.3 EUR |
67+ | 0.27 EUR |
100+ | 0.23 EUR |
250+ | 0.21 EUR |
500+ | 0.2 EUR |
1000+ | 0.19 EUR |
SMMBFJ310LT3G |
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Hersteller: onsemi
Description: RF MOSFET JFET 10V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 60mA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 12dB
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Voltage - Test: 10 V
Current - Test: 10 mA
Grade: Automotive
Qualification: AEC-Q101
Description: RF MOSFET JFET 10V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 60mA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 12dB
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Voltage - Test: 10 V
Current - Test: 10 mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 53781 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 0.42 EUR |
60+ | 0.29 EUR |
68+ | 0.26 EUR |
100+ | 0.22 EUR |
250+ | 0.21 EUR |
500+ | 0.2 EUR |
1000+ | 0.19 EUR |
2500+ | 0.18 EUR |
SMMBT2369ALT1G |
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Hersteller: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
auf Bestellung 14804 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 0.46 EUR |
57+ | 0.31 EUR |
100+ | 0.21 EUR |
500+ | 0.16 EUR |
1000+ | 0.14 EUR |
SMMBT6427LT1G |
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Hersteller: onsemi
Description: TRANS NPN DARL 40V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
Description: TRANS NPN DARL 40V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
auf Bestellung 28054 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 0.67 EUR |
43+ | 0.41 EUR |
100+ | 0.26 EUR |
500+ | 0.19 EUR |
1000+ | 0.17 EUR |
SMMBTA14LT1G |
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Hersteller: onsemi
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
auf Bestellung 30881 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 0.72 EUR |
41+ | 0.44 EUR |
100+ | 0.28 EUR |
500+ | 0.21 EUR |
1000+ | 0.18 EUR |
SMMSD103T1G |
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Hersteller: onsemi
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 8322 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 0.39 EUR |
76+ | 0.23 EUR |
123+ | 0.14 EUR |
500+ | 0.11 EUR |
1000+ | 0.093 EUR |
SMMSD701T1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 70V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 35 V
Description: DIODE SCHOTTKY 70V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 35 V
auf Bestellung 23971 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.76 EUR |
35+ | 0.51 EUR |
100+ | 0.34 EUR |
500+ | 0.27 EUR |
1000+ | 0.24 EUR |
SMMSZ4689ET1G |
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 0.55 EUR |
47+ | 0.37 EUR |
100+ | 0.18 EUR |
SMUN2111T1G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 12354 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 0.32 EUR |
87+ | 0.2 EUR |
141+ | 0.13 EUR |
500+ | 0.091 EUR |
1000+ | 0.08 EUR |