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NLV74HCT132ADR2G NLV74HCT132ADR2G onsemi MC74HC132A-D.PDF Description: IC GATE NAND 4CH 2-INP 14SOIC
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 25ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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CM1235-08DE CM1235-08DE onsemi CM1235-D.PDF Description: TVS DIODE 5.5VWM 9.2VC 16WDFN
Packaging: Bulk
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 16-WDFN (4x1.7)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
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EFC2K103NUZTDG EFC2K103NUZTDG onsemi EFC2K103NUZ-D.PDF Description: MOSFET 2N-CH 12V 40A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.54x1.77)
Part Status: Last Time Buy
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NLVX1G74MUTCG NLVX1G74MUTCG onsemi nlx1g74-d.pdf Description: IC FF D-TYPE SNGL 1BIT 8UQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 7 pF
Supplier Device Package: 8-UQFN (1.6x1.6)
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 1
Qualification: AEC-Q100
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MTB4N40ET4-ON onsemi Description: NFET D2PAK 400V 1.8R TR
Packaging: Bulk
Part Status: Active
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NCV8165ML330TBG NCV8165ML330TBG onsemi ncv8165-d.pdf Description: IC REG LINEAR 3.3V 500MA 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 18 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFNW (3x3)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 83dB ~ 63dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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NCV8165ML330TBG NCV8165ML330TBG onsemi ncv8165-d.pdf Description: IC REG LINEAR 3.3V 500MA 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 18 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFNW (3x3)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 83dB ~ 63dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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LC05111C25MTTTG onsemi Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Part Status: Obsolete
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LC05111C25MTTTG onsemi Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Part Status: Obsolete
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CAT24C512YE-GT3 CAT24C512YE-GT3 onsemi ONSM-S-A0001341927-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 512KBIT I2C 8TSSOP
Memory Organization: 64K x 8
Access Time: 900 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
DigiKey Programmable: Not Verified
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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CAT24C512XE-T2 CAT24C512XE-T2 onsemi ONSM-S-A0001341927-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 512KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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CAT24C512WI-G CAT24C512WI-G onsemi cat24c512-d.pdf Description: IC EEPROM 512K I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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CAT24C512XIT2 CAT24C512XIT2 onsemi ONSM-S-A0004900055-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 512KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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NCP7812ETG NCP7812ETG onsemi NCP7800-D.PDF Description: IC REG LINEAR 12V 1A TO220
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 12V
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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2SB926T-AA 2SB926T-AA onsemi ONSMS37269-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-NP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Part Status: Active
Packaging: Bulk
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MBT3906DW1T3 MBT3906DW1T3 onsemi ONSMS00629-1.pdf?t.download=true&u=5oefqw Description: TRANS 2PNP 40V 200MA SC88/SC70
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Active
Packaging: Bulk
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MBT3906DW1T2G MBT3906DW1T2G onsemi Description: TRANS 2PNP 40V 0.2A SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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MC74HCT4094ADR2G MC74HCT4094ADR2G onsemi mc74hct4094a-d.pdf Description: IC BUS REG TRE-ST 8STG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
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MC74HCT4094ADR2G MC74HCT4094ADR2G onsemi mc74hct4094a-d.pdf Description: IC BUS REG TRE-ST 8STG 16SOIC
Number of Bits per Element: 8
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Shift Register
Function: Serial to Parallel
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS39100PNPB3RG AMIS39100PNPB3RG onsemi AMIS-39100.pdf Description: IC PWR DRIVER 1:8 28SOIC
Fault Protection: Over Temperature
Supplier Device Package: 28-SOIC
Ratio - Input:Output: 1:8
Current - Output (Max): 350mA
Voltage - Supply (Vcc/Vdd): 3.1V ~ 5.5V
Voltage - Load: 3.5V ~ 16V
Rds On (Typ): 1Ohm
Output Configuration: High Side
Operating Temperature: -40°C ~ 175°C (TJ)
Switch Type: General Purpose
Interface: SPI
Number of Outputs: 8
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
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NCP6914AFCDT1G onsemi NCP6914.pdf Description: IC REG 5OUT BCK/LNR 3MHZ 20WLCSP
Packaging: Bulk
Part Status: Obsolete
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SZMMSZ5232BT1 SZMMSZ5232BT1 onsemi ONSM-S-A0000726829-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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MC74HC11N MC74HC11N onsemi Description: IC GATE AND 3CH 3 INP
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Part Status: Active
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Number of Inputs: 3
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Packaging: Bulk
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NTD23N03RT4G NTD23N03RT4G onsemi ntd23n03r-d.pdf Description: MOSFET N-CH 25V 3.8A/17.1A DPAK
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NTD23N03RT4 NTD23N03RT4 onsemi ntd23n03r-d.pdf Description: MOSFET N-CH 25V 3.8A/17.1A DPAK
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NTD23N03RG NTD23N03RG onsemi ntd23n03r-d.pdf Description: MOSFET N-CH 25V 3.8A/17.1A DPAK
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NTD23N03R-001 NTD23N03R-001 onsemi ntd23n03r-d.pdf Description: MOSFET N-CH 25V 3.8A/17.1A IPAK
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NTD23N03R-1G NTD23N03R-1G onsemi ntd23n03r-d.pdf Description: MOSFET N-CH 25V 3.8A/17.1A IPAK
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FCB125N65S3 FCB125N65S3 onsemi FCB125N65S3-D.PDF Description: MOSFET N-CH 650V 24A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
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FCB125N65S3 FCB125N65S3 onsemi FCB125N65S3-D.PDF Description: MOSFET N-CH 650V 24A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
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NTMFS4744NT1G NTMFS4744NT1G onsemi ntmfs4744n-d.pdf Description: MOSFET N-CH 30V 7A 5DFN
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NTMFS4744NT3G NTMFS4744NT3G onsemi ntmfs4744n-d.pdf Description: MOSFET N-CH 30V 7A 5DFN
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SCH1332-TL-W SCH1332-TL-W onsemi SCH1332.pdf Description: MOSFET P-CH 20V 2.5A SOT563/SCH6
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-563/SCH6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
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MCH6321-TL-W MCH6321-TL-W onsemi mch6321-d.pdf Description: MOSFET P-CH 20V 4A 6MCPH
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MCPH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
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LB1205-L-E onsemi Description: IC PWR DRVR DARLINGTON 1:1 16DIP
Supplier Device Package: 16-PDIP
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Load: 3.5V ~ 7V
Input Type: Non-Inverting
Output Configuration: Low Side
Operating Temperature: -20°C ~ 75°C (TA)
Switch Type: General Purpose
Number of Outputs: 4
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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LB1205Z-E onsemi Description: IC PWR DRVR DARLINGTON 1:1 16DIP
Supplier Device Package: 16-PDIP
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Load: 3.5V ~ 7V
Input Type: Non-Inverting
Output Configuration: Low Side
Operating Temperature: -20°C ~ 75°C (TA)
Switch Type: General Purpose
Number of Outputs: 4
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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MTD6N20E1 MTD6N20E1 onsemi ONSMS32816-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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SCY1117DT33RK onsemi Description: IC REG LINEAR LDO POS VOLT
Packaging: Bulk
Part Status: Active
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BD785 onsemi MOTOS09824-1.pdf?t.download=true&u=5oefqw Description: TRANSISTOR
Part Status: Active
Packaging: Bulk
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-225AA
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 800mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
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SMBD1014LT1 SMBD1014LT1 onsemi Description: SS SOT23 SWCH DIO SPCL
Part Status: Active
Packaging: Bulk
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EMH2801-TL-H onsemi Description: MOSFET P-CH 20V 3A 8EMH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-EMH
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
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NCP502SQ37T1G NCP502SQ37T1G onsemi ncp502-d.pdf Description: IC REG LINEAR 3.7V 80MA SC88A
Current - Supply (Max): 90 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.2V @ 80mA
PSRR: 55dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.7V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Regulators: 1
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Bulk
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NCP502SN37T1G NCP502SN37T1G onsemi ncp502-d.pdf Description: IC REG LINEAR 3.7V 80MA 5TSOP
Current - Supply (Max): 90 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.2V @ 80mA
PSRR: 55dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.7V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Bulk
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NCP1010AP130G NCP1010AP130G onsemi ncp1010-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
Power (Watts): 19 W
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LV8093CB-TE-L-E onsemi Description: PIEZO ACTUATOR DRIVER IC
Packaging: Bulk
Part Status: Active
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LV8415CB-TE-L-H onsemi LV8415CB.pdf Description: IC HALF BRIDGE DRVR 350MA 32WLP
Packaging: Bulk
Package / Case: 32-WFBGA, WLCSP
Mounting Type: Surface Mount
Interface: Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 500mOhm LS, 700mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 350mA
Current - Peak Output: 600mA
Technology: Bi-CMOS
Voltage - Load: 2.7V ~ 5.5V
Supplier Device Package: 32-WLP (2.47x2.47)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Obsolete
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NCP1851FCCT1G NCP1851FCCT1G onsemi NCP1851_Brief.pdf Description: IC BAT CHG LI-ION 1CL 25FLIPCHIP
Packaging: Bulk
Package / Case: 25-UFBGA, FCBGA
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 25-FlipChip (2.55x2.2)
Fault Protection: Over Voltage
Voltage - Supply (Max): 7.3V
Battery Pack Voltage: 4.5V (Max)
Current - Charging: Constant - Programmable
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NCP1852FCCT1G NCP1852FCCT1G onsemi ONSMS38092-1.pdf?t.download=true&u=5oefqw Description: IC SUPERVISOR PWR SUP MGMT CIRC
Packaging: Bulk
DigiKey Programmable: Not Verified
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LC75844M-E LC75844M-E onsemi LC75844M.pdf Description: IC DRVR LCD DISP 88 SEG 36MFPSDJ
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MZP4741ARL onsemi ONSMS11569-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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2SC5610 2SC5610 onsemi SNYOS02770-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 50V 7A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TO-220ML
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 18 W
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NCP347MTAHTBG NCP347MTAHTBG onsemi ncp347-d.pdf Description: PSMC FIXED, 1 CHANNEL, PDSO10
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NCN6011DMR2 NCN6011DMR2 onsemi NCN6011-D.pdf Description: IC XLTR VL BIDIR 10-MICRO
Packaging: Bulk
Features: SIM Card Interface
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: 10-Micro
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 2.7 V ~ 6 V
Voltage - VCCB: 2.7 V ~ 6 V
Number of Circuits: 1
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FCB260N65S3 FCB260N65S3 onsemi FCB260N65S3-D.PDF Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
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FDB9403_SN00268 FDB9403_SN00268 onsemi Description: MOSFET N-CH 40V 110A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 333W (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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BZX79C8V2_T50R BZX79C8V2_T50R onsemi bzx79c2v4-d.pdf Description: DIODE ZENER 8.2V 500MW DO35
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MUN5332DW1T1G MUN5332DW1T1G onsemi dtc143ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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MUN5332DW1T1G MUN5332DW1T1G onsemi dtc143ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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5LN01SS-TL-H 5LN01SS-TL-H onsemi 5LN01SS.pdf Description: MOSFET N-CH 50V 100MA 3SSFP
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: 3-SSFP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Bulk
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NCP729FC25T2G onsemi Description: IC REG LINEAR 2.5V 200MA 4CSP
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.14V @ 200mA
PSRR: 74dB (56dB (100Hz ~ 10kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-CSP (1.06x1.06)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 50 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-WFBGA, CSPBGA
Packaging: Bulk
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NLV74HCT132ADR2G MC74HC132A-D.PDF
NLV74HCT132ADR2G
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOIC
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 25ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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CM1235-08DE CM1235-D.PDF
CM1235-08DE
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 9.2VC 16WDFN
Packaging: Bulk
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 16-WDFN (4x1.7)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
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EFC2K103NUZTDG EFC2K103NUZ-D.PDF
EFC2K103NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 12V 40A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.54x1.77)
Part Status: Last Time Buy
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NLVX1G74MUTCG nlx1g74-d.pdf
NLVX1G74MUTCG
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 1BIT 8UQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 7 pF
Supplier Device Package: 8-UQFN (1.6x1.6)
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 1
Qualification: AEC-Q100
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MTB4N40ET4-ON
Hersteller: onsemi
Description: NFET D2PAK 400V 1.8R TR
Packaging: Bulk
Part Status: Active
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NCV8165ML330TBG ncv8165-d.pdf
NCV8165ML330TBG
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 18 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFNW (3x3)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 83dB ~ 63dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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3000+0.74 EUR
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NCV8165ML330TBG ncv8165-d.pdf
NCV8165ML330TBG
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 18 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFNW (3x3)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 83dB ~ 63dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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8+2.83 EUR
13+1.71 EUR
25+1.44 EUR
100+1.13 EUR
250+0.99 EUR
500+0.9 EUR
1000+0.82 EUR
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LC05111C25MTTTG
Hersteller: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Part Status: Obsolete
Produkt ist nicht verfügbar
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LC05111C25MTTTG
Hersteller: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Part Status: Obsolete
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9+2.59 EUR
12+1.9 EUR
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100+1.52 EUR
250+1.44 EUR
500+1.38 EUR
1000+1.33 EUR
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CAT24C512YE-GT3 ONSM-S-A0001341927-1.pdf?t.download=true&u=5oefqw
CAT24C512YE-GT3
Hersteller: onsemi
Description: IC EEPROM 512KBIT I2C 8TSSOP
Memory Organization: 64K x 8
Access Time: 900 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
DigiKey Programmable: Not Verified
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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CAT24C512XE-T2 ONSM-S-A0001341927-1.pdf?t.download=true&u=5oefqw
CAT24C512XE-T2
Hersteller: onsemi
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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CAT24C512WI-G cat24c512-d.pdf
CAT24C512WI-G
Hersteller: onsemi
Description: IC EEPROM 512K I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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422+1.31 EUR
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CAT24C512XIT2 ONSM-S-A0004900055-1.pdf?t.download=true&u=5oefqw
CAT24C512XIT2
Hersteller: onsemi
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NCP7812ETG NCP7800-D.PDF
NCP7812ETG
Hersteller: onsemi
Description: IC REG LINEAR 12V 1A TO220
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 12V
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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1193+0.44 EUR
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2SB926T-AA ONSMS37269-1.pdf?t.download=true&u=5oefqw
2SB926T-AA
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-NP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Part Status: Active
Packaging: Bulk
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3806+0.15 EUR
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MBT3906DW1T3 ONSMS00629-1.pdf?t.download=true&u=5oefqw
MBT3906DW1T3
Hersteller: onsemi
Description: TRANS 2PNP 40V 200MA SC88/SC70
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Active
Packaging: Bulk
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7869+0.071 EUR
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MBT3906DW1T2G
MBT3906DW1T2G
Hersteller: onsemi
Description: TRANS 2PNP 40V 0.2A SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74HCT4094ADR2G mc74hct4094a-d.pdf
MC74HCT4094ADR2G
Hersteller: onsemi
Description: IC BUS REG TRE-ST 8STG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74HCT4094ADR2G mc74hct4094a-d.pdf
MC74HCT4094ADR2G
Hersteller: onsemi
Description: IC BUS REG TRE-ST 8STG 16SOIC
Number of Bits per Element: 8
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Shift Register
Function: Serial to Parallel
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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20+1.09 EUR
25+0.9 EUR
100+0.7 EUR
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AMIS39100PNPB3RG AMIS-39100.pdf
AMIS39100PNPB3RG
Hersteller: onsemi
Description: IC PWR DRIVER 1:8 28SOIC
Fault Protection: Over Temperature
Supplier Device Package: 28-SOIC
Ratio - Input:Output: 1:8
Current - Output (Max): 350mA
Voltage - Supply (Vcc/Vdd): 3.1V ~ 5.5V
Voltage - Load: 3.5V ~ 16V
Rds On (Typ): 1Ohm
Output Configuration: High Side
Operating Temperature: -40°C ~ 175°C (TJ)
Switch Type: General Purpose
Interface: SPI
Number of Outputs: 8
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
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99+5.91 EUR
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NCP6914AFCDT1G NCP6914.pdf
Hersteller: onsemi
Description: IC REG 5OUT BCK/LNR 3MHZ 20WLCSP
Packaging: Bulk
Part Status: Obsolete
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535+1.09 EUR
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SZMMSZ5232BT1 ONSM-S-A0000726829-1.pdf?t.download=true&u=5oefqw
SZMMSZ5232BT1
Hersteller: onsemi
Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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1069+0.5 EUR
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MC74HC11N
MC74HC11N
Hersteller: onsemi
Description: IC GATE AND 3CH 3 INP
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Part Status: Active
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Number of Inputs: 3
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Packaging: Bulk
Produkt ist nicht verfügbar
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NTD23N03RT4G ntd23n03r-d.pdf
NTD23N03RT4G
Hersteller: onsemi
Description: MOSFET N-CH 25V 3.8A/17.1A DPAK
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2885+0.19 EUR
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NTD23N03RT4 ntd23n03r-d.pdf
NTD23N03RT4
Hersteller: onsemi
Description: MOSFET N-CH 25V 3.8A/17.1A DPAK
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NTD23N03RG ntd23n03r-d.pdf
NTD23N03RG
Hersteller: onsemi
Description: MOSFET N-CH 25V 3.8A/17.1A DPAK
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NTD23N03R-001 ntd23n03r-d.pdf
NTD23N03R-001
Hersteller: onsemi
Description: MOSFET N-CH 25V 3.8A/17.1A IPAK
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3372+0.19 EUR
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NTD23N03R-1G ntd23n03r-d.pdf
NTD23N03R-1G
Hersteller: onsemi
Description: MOSFET N-CH 25V 3.8A/17.1A IPAK
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FCB125N65S3 FCB125N65S3-D.PDF
FCB125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
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FCB125N65S3 FCB125N65S3-D.PDF
FCB125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 1296 Stücke:
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2+11.85 EUR
10+7.95 EUR
100+5.72 EUR
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NTMFS4744NT1G ntmfs4744n-d.pdf
NTMFS4744NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
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NTMFS4744NT3G ntmfs4744n-d.pdf
NTMFS4744NT3G
Hersteller: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
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SCH1332-TL-W SCH1332.pdf
SCH1332-TL-W
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.5A SOT563/SCH6
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-563/SCH6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
auf Bestellung 12886 Stücke:
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2664+0.21 EUR
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MCH6321-TL-W mch6321-d.pdf
MCH6321-TL-W
Hersteller: onsemi
Description: MOSFET P-CH 20V 4A 6MCPH
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MCPH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
auf Bestellung 2990 Stücke:
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AnzahlPrivatkunde
1986+0.29 EUR
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LB1205-L-E
Hersteller: onsemi
Description: IC PWR DRVR DARLINGTON 1:1 16DIP
Supplier Device Package: 16-PDIP
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Load: 3.5V ~ 7V
Input Type: Non-Inverting
Output Configuration: Low Side
Operating Temperature: -20°C ~ 75°C (TA)
Switch Type: General Purpose
Number of Outputs: 4
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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LB1205Z-E
Hersteller: onsemi
Description: IC PWR DRVR DARLINGTON 1:1 16DIP
Supplier Device Package: 16-PDIP
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Load: 3.5V ~ 7V
Input Type: Non-Inverting
Output Configuration: Low Side
Operating Temperature: -20°C ~ 75°C (TA)
Switch Type: General Purpose
Number of Outputs: 4
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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MTD6N20E1 ONSMS32816-1.pdf?t.download=true&u=5oefqw
MTD6N20E1
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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2418+0.29 EUR
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SCY1117DT33RK
Hersteller: onsemi
Description: IC REG LINEAR LDO POS VOLT
Packaging: Bulk
Part Status: Active
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673+0.81 EUR
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BD785 MOTOS09824-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: TRANSISTOR
Part Status: Active
Packaging: Bulk
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-225AA
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 800mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
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SMBD1014LT1
SMBD1014LT1
Hersteller: onsemi
Description: SS SOT23 SWCH DIO SPCL
Part Status: Active
Packaging: Bulk
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EMH2801-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 8EMH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-EMH
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
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NCP502SQ37T1G ncp502-d.pdf
NCP502SQ37T1G
Hersteller: onsemi
Description: IC REG LINEAR 3.7V 80MA SC88A
Current - Supply (Max): 90 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.2V @ 80mA
PSRR: 55dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.7V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Regulators: 1
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Bulk
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1025+0.58 EUR
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NCP502SN37T1G ncp502-d.pdf
NCP502SN37T1G
Hersteller: onsemi
Description: IC REG LINEAR 3.7V 80MA 5TSOP
Current - Supply (Max): 90 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.2V @ 80mA
PSRR: 55dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.7V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Bulk
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1031+0.58 EUR
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NCP1010AP130G ncp1010-d.pdf
NCP1010AP130G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
Power (Watts): 19 W
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LV8093CB-TE-L-E
Hersteller: onsemi
Description: PIEZO ACTUATOR DRIVER IC
Packaging: Bulk
Part Status: Active
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340+1.84 EUR
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LV8415CB-TE-L-H LV8415CB.pdf
Hersteller: onsemi
Description: IC HALF BRIDGE DRVR 350MA 32WLP
Packaging: Bulk
Package / Case: 32-WFBGA, WLCSP
Mounting Type: Surface Mount
Interface: Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 500mOhm LS, 700mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 350mA
Current - Peak Output: 600mA
Technology: Bi-CMOS
Voltage - Load: 2.7V ~ 5.5V
Supplier Device Package: 32-WLP (2.47x2.47)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Obsolete
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168+3.57 EUR
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NCP1851FCCT1G NCP1851_Brief.pdf
NCP1851FCCT1G
Hersteller: onsemi
Description: IC BAT CHG LI-ION 1CL 25FLIPCHIP
Packaging: Bulk
Package / Case: 25-UFBGA, FCBGA
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 25-FlipChip (2.55x2.2)
Fault Protection: Over Voltage
Voltage - Supply (Max): 7.3V
Battery Pack Voltage: 4.5V (Max)
Current - Charging: Constant - Programmable
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189+2.86 EUR
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NCP1852FCCT1G ONSMS38092-1.pdf?t.download=true&u=5oefqw
NCP1852FCCT1G
Hersteller: onsemi
Description: IC SUPERVISOR PWR SUP MGMT CIRC
Packaging: Bulk
DigiKey Programmable: Not Verified
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150+3.59 EUR
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LC75844M-E LC75844M.pdf
LC75844M-E
Hersteller: onsemi
Description: IC DRVR LCD DISP 88 SEG 36MFPSDJ
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159+3.47 EUR
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MZP4741ARL ONSMS11569-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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2219+0.3 EUR
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2SC5610 SNYOS02770-1.pdf?t.download=true&u=5oefqw
2SC5610
Hersteller: onsemi
Description: TRANS NPN 50V 7A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TO-220ML
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 18 W
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94+5.66 EUR
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NCP347MTAHTBG ncp347-d.pdf
NCP347MTAHTBG
Hersteller: onsemi
Description: PSMC FIXED, 1 CHANNEL, PDSO10
auf Bestellung 126642 Stücke:
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NCN6011DMR2 NCN6011-D.pdf
NCN6011DMR2
Hersteller: onsemi
Description: IC XLTR VL BIDIR 10-MICRO
Packaging: Bulk
Features: SIM Card Interface
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: 10-Micro
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 2.7 V ~ 6 V
Voltage - VCCB: 2.7 V ~ 6 V
Number of Circuits: 1
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267+2.02 EUR
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FCB260N65S3 FCB260N65S3-D.PDF
FCB260N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
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3+9.13 EUR
10+6.03 EUR
100+4.27 EUR
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FDB9403_SN00268
FDB9403_SN00268
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 333W (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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BZX79C8V2_T50R bzx79c2v4-d.pdf
BZX79C8V2_T50R
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MUN5332DW1T1G dtc143ep-d.pdf
MUN5332DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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MUN5332DW1T1G dtc143ep-d.pdf
MUN5332DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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5LN01SS-TL-H 5LN01SS.pdf
5LN01SS-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3SSFP
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: 3-SSFP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Bulk
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NCP729FC25T2G
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 200MA 4CSP
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.14V @ 200mA
PSRR: 74dB (56dB (100Hz ~ 10kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-CSP (1.06x1.06)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 50 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-WFBGA, CSPBGA
Packaging: Bulk
auf Bestellung 124006 Stücke:
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AnzahlPrivatkunde
666+0.87 EUR
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