| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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NGB8206NT4G | onsemi |
Description: IGNITION IGBT 20 A, 350 V, N-CHA Packaging: Bulk |
auf Bestellung 892 Stücke: Lieferzeit 10-14 Tag (e) |
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NIS6151MT1TXG | onsemi |
Description: IC ELECTRONIC FUSE 10WDFN Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 5V Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 10-WDFNW (3x3) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NIS6151MT1TXG | onsemi |
Description: IC ELECTRONIC FUSE 10WDFN Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 5V Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 10-WDFNW (3x3) Part Status: Active |
auf Bestellung 453 Stücke: Lieferzeit 10-14 Tag (e) |
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NIS6151MT2TXG | onsemi |
Description: IC ELECTRONIC FUSE 10WDFN Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 5V Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 10-WDFNW (3x3) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NIS6151MT2TXG | onsemi |
Description: IC ELECTRONIC FUSE 10WDFN Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 5V Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 10-WDFNW (3x3) |
auf Bestellung 2711 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV70-ON | onsemi |
Description: DIODE ARRAY GP 70V 200MA SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 µA @ 70 V |
auf Bestellung 60202 Stücke: Lieferzeit 10-14 Tag (e) |
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LP2951ACD-3.3R | onsemi |
Description: IC REG LINEAR 3.3V 100MA 8SOIC Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DTC114T | onsemi |
Description: TRANS PREBIAS NPN 50V 100MAPackaging: Bulk |
auf Bestellung 65000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114Y | onsemi |
Description: TRANS PREBIAS NPN 50V 100MAPackaging: Bulk Part Status: Active |
auf Bestellung 49152 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114TXV3T1 | onsemi |
Description: TRANS PREBIASPackaging: Bulk |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT24C128WE-GT3 | onsemi |
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC DigiKey Programmable: Not Verified Memory Organization: 16K x 8 Access Time: 400 ns Memory Interface: I²C Write Cycle Time - Word, Page: 5ms Part Status: Obsolete Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 128Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NV25160DWHFT3G | onsemi |
Description: IC EEPROM 16KBIT SPI 10MHZ 8SOICDigiKey Programmable: Not Verified Qualification: AEC-Q100 Grade: Automotive Memory Organization: 2K x 8 Access Time: 40 ns Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Part Status: Active Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 10 MHz Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 150°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 5796 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD360N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 700µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 916 pF @ 400 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD360N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 700µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 916 pF @ 400 V |
auf Bestellung 4968 Stücke: Lieferzeit 10-14 Tag (e) |
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NLV27WZ16DFT2G | onsemi |
Description: IC CLK BUFFER 1:1 SC88Supplier Device Package: SC-88/SC70-6/SOT-363 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100EP105MNG | onsemi |
Description: IC GATE AND/NAND QUAD 2INP 32QFNNumber of Circuits: 4 Supplier Device Package: 32-QFN (5x5) Schmitt Trigger Input: No Number of Inputs: 8 Input (2, 2, 2, 2) Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: AND/NAND Gate Mounting Type: Surface Mount Output Type: Differential Package / Case: 32-VFQFN Exposed Pad Packaging: Tube |
auf Bestellung 31399 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10EP105MNG | onsemi |
Description: IC GATE AND/NAND QUAD 2INP 32QFNNumber of Circuits: 4 Supplier Device Package: 32-QFN (5x5) Schmitt Trigger Input: No Number of Inputs: 8 Input (2, 2, 2, 2) Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: AND/NAND Gate Mounting Type: Surface Mount Output Type: Differential Package / Case: 32-VFQFN Exposed Pad Packaging: Tube |
auf Bestellung 15308 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHCT02ADTR2G | onsemi |
Description: IC GATE NOR 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74VHCT02ADTR2G | onsemi |
Description: IC GATE NOR 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 103 Stücke: Lieferzeit 10-14 Tag (e) |
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| SC79182DR2 | onsemi |
Description: ANA UNIV VOLT MONITOR DigiKey Programmable: Not Verified Part Status: Active Packaging: Bulk |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SC79178GDR2G | onsemi |
Description: ANA MOTOR CONTROLLER Part Status: Active Packaging: Bulk |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM285D-2.5R2 | onsemi |
Description: IC VREF SHUNT 1.5% 8SOICNoise - 10Hz to 10kHz: 120µVrms Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 8-SOIC Operating Temperature: -40°C ~ 85°C (TA) Reference Type: Shunt Mounting Type: Surface Mount Output Type: Fixed Temperature Coefficient: 80ppm/°C Typical Package / Case: 8-SOIC (0.154", 3.90mm Width) Tolerance: ±1.5% Packaging: Bulk Current - Output: 20 mA Current - Cathode: 30 µA |
auf Bestellung 8154 Stücke: Lieferzeit 10-14 Tag (e) |
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| 74LVC14ADR2G | onsemi |
Description: IC INVERT SCHMITT 6CH 6IN 14SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC10H188P | onsemi |
Description: IC BUF NON-INVERT -5.46V 16DIP |
auf Bestellung 2716 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H188PG | onsemi |
Description: IC BUF NON-INVERT -5.46V 16DIP |
auf Bestellung 5185 Stücke: Lieferzeit 10-14 Tag (e) |
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| RE0208DA-TR-E | onsemi |
Description: DIODE 800V 200MAPackaging: Bulk |
auf Bestellung 2839709 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP5208DR2 | onsemi |
Description: IC REG CTRLR DDR 2OUT 8SOICSupplier Device Package: 8-SOIC Applications: Controller, DDR Operating Temperature: 0°C ~ 70°C Voltage - Input: 1.7V ~ 5.5V Number of Outputs: 2 Mounting Type: Surface Mount Voltage - Output: 0.9V, 1.25V Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 4363 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV7341D21R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EL16DTR2G | onsemi |
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOPPackaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Number of Bits: 1 Logic Type: Differential Receiver Operating Temperature: -40°C ~ 85°C Supply Voltage: 4.2V ~ 5.7V Supplier Device Package: 8-TSSOP |
auf Bestellung 4578 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP160AFCT350T2G | onsemi |
Description: IC REG LINEAR 3.5V 250MA 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WLCSP (0.64x0.64) Voltage - Output (Min/Fixed): 3.5V Control Features: Enable Part Status: Obsolete PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.14V @ 250mA Protection Features: Over Current, Over Temperature, Soft Start |
auf Bestellung 4970 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV33064P-5RPG | onsemi |
Description: IC SUPERVISOR 1 CHANNEL TO92-3Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Voltage - Threshold: 4.6V Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C Reset: Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Box (TB) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FJV3113RMTF-ON | onsemi |
Description: 0.1A, 50V, NPNFrequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAV433MTCX-ON | onsemi |
Description: IC SWITCH SP3T X 3 9OHM 20TSSOPNumber of Circuits: 3 Part Status: Active Current - Leakage (IS(off)) (Max): 1µA Channel Capacitance (CS(off), CD(off)): 3pF, 4pF Switch Time (Ton, Toff) (Max): 5.5ns, 4ns Multiplexer/Demultiplexer Circuit: 3:1 Switch Circuit: SP3T Crosstalk: -70dB @ 30MHz Voltage - Supply, Single (V+): 2.3V ~ 3.6V Supplier Device Package: 20-TSSOP -3db Bandwidth: 550MHz On-State Resistance (Max): 9Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
auf Bestellung 52000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TIG064E8-TL-H-ON | onsemi |
Description: N-CHANNEL IGBT FOR LIGHT-CONTROLCurrent - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 400 V Supplier Device Package: 8-ECH Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Bulk |
auf Bestellung 1169624 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCD317BTG | onsemi |
Description: IC REG LINEAR ADJ 1.5A TO220 Packaging: Bulk |
auf Bestellung 4306 Stücke: Lieferzeit 10-14 Tag (e) |
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| QPA1223 | onsemi | Description: EMITTER-DETECOR HERMETIC PAIR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTMTSC002N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 45A/236A 8TDFNWPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 9W (Ta), 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 520µA Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTSC002N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 45A/236A 8TDFNWInput Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 520µA Power Dissipation (Max): 9W (Ta), 255W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4327 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTS6D0N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4.5V @ 379µA Power Dissipation (Max): 4.9W (Ta), 245W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTS6D0N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4.5V @ 379µA Power Dissipation (Max): 4.9W (Ta), 245W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTSC1D6N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 35A/267A 8TDFNWRds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 650µA Power Dissipation (Max): 5.1W (Ta), 291W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
auf Bestellung 63000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTSC1D6N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 35A/267A 8TDFNWInput Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 650µA Power Dissipation (Max): 5.1W (Ta), 291W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 64450 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTS4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMTS4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
auf Bestellung 181 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTSC4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMTSC4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMTSC1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 33A/287A 8DFNWRds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 650µA Power Dissipation (Max): 3.3W (Ta), 250W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMT190N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMT190N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMT150N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMT150N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
auf Bestellung 22620 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMT125N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEInput Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-TDFN (8x8) Vgs(th) (Max) @ Id: 4V @ 2.1mA Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ADP32120091MNR2G | onsemi |
Description: SWITCHING CONTROLLERPackaging: Bulk |
auf Bestellung 181383 Stücke: Lieferzeit 10-14 Tag (e) |
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ADP3212MNR2G | onsemi |
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFNPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad Voltage - Output: 0.3V ~ 1.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.3V ~ 22V Operating Temperature: -40°C ~ 100°C Applications: Controller, Intel IMVP-6.5™ Supplier Device Package: 48-QFN (7x7) |
auf Bestellung 957926 Stücke: Lieferzeit 10-14 Tag (e) |
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ADP3212AMNR2G | onsemi |
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFNPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad Voltage - Output: Up to 1.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.3V ~ 22V Operating Temperature: -40°C ~ 100°C Applications: Controller, Intel IMVP-6.5™ Supplier Device Package: 48-QFN (7x7) |
auf Bestellung 3830 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74HC75D | onsemi |
Description: 74HC75 - QUAD BISTABLE TRANSPARA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MCR8M | onsemi |
Description: THYRISTOR SCR 600V 80A |
auf Bestellung 24150 Stücke: Lieferzeit 10-14 Tag (e) |
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NL17SZ374DBVT1G | onsemi |
Description: IC FF D-TYPE 1-ELE 1-BIT SC-74Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 1 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 175 MHz Input Capacitance: 4 pF Supplier Device Package: SC-74 Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Number of Bits per Element: 1 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMSZ1600-18T3 | onsemi |
Description: DIODE ZENER 0.5W SPCL SOD123 Packaging: Bulk |
auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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PN4121 | onsemi |
Description: TRANS PNP 40V 0.1A TO92-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NGB8206NT4G |
auf Bestellung 892 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 3.09 EUR |
| NIS6151MT1TXG |
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 5V
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFNW (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 5V
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFNW (3x3)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NIS6151MT1TXG |
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 5V
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFNW (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 5V
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFNW (3x3)
Part Status: Active
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.06 EUR |
| 10+ | 2.55 EUR |
| 100+ | 2.03 EUR |
| NIS6151MT2TXG |
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 5V
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFNW (3x3)
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 5V
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFNW (3x3)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NIS6151MT2TXG |
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 5V
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFNW (3x3)
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 5V
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFNW (3x3)
auf Bestellung 2711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.06 EUR |
| 10+ | 2.55 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.45 EUR |
| BAV70-ON |
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Hersteller: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 µA @ 70 V
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 µA @ 70 V
auf Bestellung 60202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5621+ | 0.092 EUR |
| DTC114T |
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auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7869+ | 0.071 EUR |
| DTC114Y |
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auf Bestellung 49152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11539+ | 0.06 EUR |
| DTC114TXV3T1 |
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auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7869+ | 0.071 EUR |
| CAT24C128WE-GT3 |
Hersteller: onsemi
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Access Time: 400 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Access Time: 400 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NV25160DWHFT3G |
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Hersteller: onsemi
Description: IC EEPROM 16KBIT SPI 10MHZ 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 2K x 8
Access Time: 40 ns
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 10 MHz
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 16KBIT SPI 10MHZ 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 2K x 8
Access Time: 40 ns
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 10 MHz
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 23+ | 0.93 EUR |
| 25+ | 0.9 EUR |
| 50+ | 0.89 EUR |
| 100+ | 0.87 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.81 EUR |
| NTD360N65S3H |
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Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 916 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 916 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.92 EUR |
| NTD360N65S3H |
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Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 916 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 916 pF @ 400 V
auf Bestellung 4968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.5 EUR |
| 10+ | 4.22 EUR |
| 50+ | 3.25 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.38 EUR |
| NLV27WZ16DFT2G |
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Hersteller: onsemi
Description: IC CLK BUFFER 1:1 SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC CLK BUFFER 1:1 SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.6 EUR |
| MC100EP105MNG |
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Hersteller: onsemi
Description: IC GATE AND/NAND QUAD 2INP 32QFN
Number of Circuits: 4
Supplier Device Package: 32-QFN (5x5)
Schmitt Trigger Input: No
Number of Inputs: 8 Input (2, 2, 2, 2)
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND/NAND Gate
Mounting Type: Surface Mount
Output Type: Differential
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tube
Description: IC GATE AND/NAND QUAD 2INP 32QFN
Number of Circuits: 4
Supplier Device Package: 32-QFN (5x5)
Schmitt Trigger Input: No
Number of Inputs: 8 Input (2, 2, 2, 2)
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND/NAND Gate
Mounting Type: Surface Mount
Output Type: Differential
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tube
auf Bestellung 31399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 22.36 EUR |
| MC10EP105MNG |
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Hersteller: onsemi
Description: IC GATE AND/NAND QUAD 2INP 32QFN
Number of Circuits: 4
Supplier Device Package: 32-QFN (5x5)
Schmitt Trigger Input: No
Number of Inputs: 8 Input (2, 2, 2, 2)
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND/NAND Gate
Mounting Type: Surface Mount
Output Type: Differential
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tube
Description: IC GATE AND/NAND QUAD 2INP 32QFN
Number of Circuits: 4
Supplier Device Package: 32-QFN (5x5)
Schmitt Trigger Input: No
Number of Inputs: 8 Input (2, 2, 2, 2)
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND/NAND Gate
Mounting Type: Surface Mount
Output Type: Differential
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tube
auf Bestellung 15308 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 22.36 EUR |
| MC74VHCT02ADTR2G |
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Hersteller: onsemi
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHCT02ADTR2G |
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Hersteller: onsemi
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 45+ | 0.46 EUR |
| 51+ | 0.42 EUR |
| 100+ | 0.36 EUR |
| SC79182DR2 |
Hersteller: onsemi
Description: ANA UNIV VOLT MONITOR
DigiKey Programmable: Not Verified
Part Status: Active
Packaging: Bulk
Description: ANA UNIV VOLT MONITOR
DigiKey Programmable: Not Verified
Part Status: Active
Packaging: Bulk
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 265+ | 2.37 EUR |
| SC79178GDR2G |
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 263+ | 2.39 EUR |
| LM285D-2.5R2 |
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Hersteller: onsemi
Description: IC VREF SHUNT 1.5% 8SOIC
Noise - 10Hz to 10kHz: 120µVrms
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Fixed
Temperature Coefficient: 80ppm/°C Typical
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±1.5%
Packaging: Bulk
Current - Output: 20 mA
Current - Cathode: 30 µA
Description: IC VREF SHUNT 1.5% 8SOIC
Noise - 10Hz to 10kHz: 120µVrms
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Fixed
Temperature Coefficient: 80ppm/°C Typical
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±1.5%
Packaging: Bulk
Current - Output: 20 mA
Current - Cathode: 30 µA
auf Bestellung 8154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 343+ | 1.62 EUR |
| 74LVC14ADR2G |
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 6IN 14SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: IC INVERT SCHMITT 6CH 6IN 14SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H188P |
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Hersteller: onsemi
Description: IC BUF NON-INVERT -5.46V 16DIP
Description: IC BUF NON-INVERT -5.46V 16DIP
auf Bestellung 2716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 7.57 EUR |
| MC10H188PG |
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Hersteller: onsemi
Description: IC BUF NON-INVERT -5.46V 16DIP
Description: IC BUF NON-INVERT -5.46V 16DIP
auf Bestellung 5185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 15.1 EUR |
| RE0208DA-TR-E |
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auf Bestellung 2839709 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11539+ | 0.057 EUR |
| NCP5208DR2 |
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Hersteller: onsemi
Description: IC REG CTRLR DDR 2OUT 8SOIC
Supplier Device Package: 8-SOIC
Applications: Controller, DDR
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 1.7V ~ 5.5V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.9V, 1.25V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC REG CTRLR DDR 2OUT 8SOIC
Supplier Device Package: 8-SOIC
Applications: Controller, DDR
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 1.7V ~ 5.5V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.9V, 1.25V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 4363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 919+ | 0.65 EUR |
| NCV7341D21R2G |
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Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC100EL16DTR2G |
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Hersteller: onsemi
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 4.2V ~ 5.7V
Supplier Device Package: 8-TSSOP
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 4.2V ~ 5.7V
Supplier Device Package: 8-TSSOP
auf Bestellung 4578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 73+ | 8.01 EUR |
| NCP160AFCT350T2G |
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Hersteller: onsemi
Description: IC REG LINEAR 3.5V 250MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.64x0.64)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Obsolete
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.14V @ 250mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 3.5V 250MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.64x0.64)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Obsolete
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.14V @ 250mA
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| NCV33064P-5RPG |
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Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Voltage - Threshold: 4.6V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Voltage - Threshold: 4.6V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJV3113RMTF-ON |
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Hersteller: onsemi
Description: 0.1A, 50V, NPN
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Description: 0.1A, 50V, NPN
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15000+ | 0.042 EUR |
| FSAV433MTCX-ON |
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Hersteller: onsemi
Description: IC SWITCH SP3T X 3 9OHM 20TSSOP
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 3pF, 4pF
Switch Time (Ton, Toff) (Max): 5.5ns, 4ns
Multiplexer/Demultiplexer Circuit: 3:1
Switch Circuit: SP3T
Crosstalk: -70dB @ 30MHz
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Supplier Device Package: 20-TSSOP
-3db Bandwidth: 550MHz
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC SWITCH SP3T X 3 9OHM 20TSSOP
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 3pF, 4pF
Switch Time (Ton, Toff) (Max): 5.5ns, 4ns
Multiplexer/Demultiplexer Circuit: 3:1
Switch Circuit: SP3T
Crosstalk: -70dB @ 30MHz
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Supplier Device Package: 20-TSSOP
-3db Bandwidth: 550MHz
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 398+ | 1.45 EUR |
| TIG064E8-TL-H-ON |
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Hersteller: onsemi
Description: N-CHANNEL IGBT FOR LIGHT-CONTROL
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Supplier Device Package: 8-ECH
Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
Description: N-CHANNEL IGBT FOR LIGHT-CONTROL
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Supplier Device Package: 8-ECH
Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
auf Bestellung 1169624 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 376+ | 1.58 EUR |
| SCD317BTG |
auf Bestellung 4306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 744+ | 0.75 EUR |
| QPA1223 |
Hersteller: onsemi
Description: EMITTER-DETECOR HERMETIC PAIR
Description: EMITTER-DETECOR HERMETIC PAIR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMTSC002N10MCTXG |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.11 EUR |
| NTMTSC002N10MCTXG |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4327 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.42 EUR |
| 10+ | 9.04 EUR |
| 100+ | 6.57 EUR |
| 500+ | 6.25 EUR |
| NTMTS6D0N15MC |
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Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.58 EUR |
| NTMTS6D0N15MC |
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Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.35 EUR |
| 10+ | 7.97 EUR |
| 100+ | 5.99 EUR |
| 500+ | 5.58 EUR |
| NTMTSC1D6N10MCTXG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.46 EUR |
| NTMTSC1D6N10MCTXG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 64450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.15 EUR |
| 10+ | 8.89 EUR |
| 100+ | 6.68 EUR |
| NTMTS4D3N15MC |
![]() |
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS4D3N15MC |
![]() |
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.21 EUR |
| 10+ | 11.04 EUR |
| 100+ | 8.13 EUR |
| NTMTSC4D3N15MC |
![]() |
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMTSC4D3N15MC |
![]() |
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMTSC1D5N08MC |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT190N65S3H |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT190N65S3H |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMT150N65S3HF |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.89 EUR |
| NTMT150N65S3HF |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
auf Bestellung 22620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.93 EUR |
| 10+ | 10.13 EUR |
| 50+ | 8.07 EUR |
| 100+ | 7.4 EUR |
| 500+ | 7.2 EUR |
| NTMT125N65S3H |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| ADP32120091MNR2G |
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auf Bestellung 181383 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 279+ | 1.94 EUR |
| ADP3212MNR2G |
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Hersteller: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
auf Bestellung 957926 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 245+ | 2.19 EUR |
| ADP3212AMNR2G |
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Hersteller: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
auf Bestellung 3830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 176+ | 3.06 EUR |
| MC74HC75D |
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Hersteller: onsemi
Description: 74HC75 - QUAD BISTABLE TRANSPARA
Description: 74HC75 - QUAD BISTABLE TRANSPARA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCR8M |
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Hersteller: onsemi
Description: THYRISTOR SCR 600V 80A
Description: THYRISTOR SCR 600V 80A
auf Bestellung 24150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1202+ | 0.49 EUR |
| NL17SZ374DBVT1G |
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Hersteller: onsemi
Description: IC FF D-TYPE 1-ELE 1-BIT SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 175 MHz
Input Capacitance: 4 pF
Supplier Device Package: SC-74
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE 1-ELE 1-BIT SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 175 MHz
Input Capacitance: 4 pF
Supplier Device Package: SC-74
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Bits per Element: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.08 EUR |
| SMSZ1600-18T3 |
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11539+ | 0.058 EUR |
| PN4121 |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
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