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RE0208DA-TR-E onsemi INSL-S-A0001412437-1.pdf?t.download=true&u=5oefqw Description: DIODE 800V 200MA
Packaging: Bulk
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NCP5208DR2 NCP5208DR2 onsemi ncp5208-d.pdf Description: IC REG CTRLR DDR 2OUT 8SOIC
Supplier Device Package: 8-SOIC
Applications: Controller, DDR
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 1.7V ~ 5.5V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.9V, 1.25V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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NCV7341D21R2G NCV7341D21R2G onsemi ncv7341-d.pdf Description: IC TRANSCEIVER HALF 1/1 14SOIC
Produkt ist nicht verfügbar
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MC100EL16DTR2G MC100EL16DTR2G onsemi mc10el16-d.pdf Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 4.2V ~ 5.7V
Supplier Device Package: 8-TSSOP
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NCP160AFCT350T2G NCP160AFCT350T2G onsemi ncp160-d.pdf Description: IC REG LINEAR 3.5V 250MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.64x0.64)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Obsolete
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.14V @ 250mA
Protection Features: Over Current, Over Temperature, Soft Start
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NCV33064P-5RPG NCV33064P-5RPG onsemi mc34064-d.pdf Description: IC SUPERVISOR 1 CHANNEL TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Voltage - Threshold: 4.6V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FJV3113RMTF-ON onsemi ONSM-S-A0003587533-1.pdf?t.download=true&u=5oefqw Description: 0.1A, 50V, NPN
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
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FSAV433MTCX-ON FSAV433MTCX-ON onsemi ONSM-S-A0003588616-1.pdf?t.download=true&u=5oefqw Description: IC SWITCH SP3T X 3 9OHM 20TSSOP
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 3pF, 4pF
Switch Time (Ton, Toff) (Max): 5.5ns, 4ns
Multiplexer/Demultiplexer Circuit: 3:1
Switch Circuit: SP3T
Crosstalk: -70dB @ 30MHz
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Supplier Device Package: 20-TSSOP
-3db Bandwidth: 550MHz
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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TIG064E8-TL-H-ON onsemi SSCLS00379-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL IGBT FOR LIGHT-CONTROL
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Supplier Device Package: 8-ECH
Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
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SCD317BTG onsemi Description: IC REG LINEAR ADJ 1.5A TO220
Packaging: Bulk
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QPA1223 onsemi Description: EMITTER-DETECOR HERMETIC PAIR
Produkt ist nicht verfügbar
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NTMTSC002N10MCTXG NTMTSC002N10MCTXG onsemi ntmtsc002n10mc-d.pdf Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
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NTMTSC002N10MCTXG NTMTSC002N10MCTXG onsemi ntmtsc002n10mc-d.pdf Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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NTMTS6D0N15MC NTMTS6D0N15MC onsemi ntmts6d0n15mc-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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NTMTS6D0N15MC NTMTS6D0N15MC onsemi ntmts6d0n15mc-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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10+6.7 EUR
100+5.03 EUR
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NTMTSC1D6N10MCTXG NTMTSC1D6N10MCTXG onsemi ntmtsc1d6n10mc-d.pdf Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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NTMTSC1D6N10MCTXG NTMTSC1D6N10MCTXG onsemi ntmtsc1d6n10mc-d.pdf Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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NTMTS4D3N15MC NTMTS4D3N15MC onsemi ntmts4d3n15mc-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Produkt ist nicht verfügbar
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NTMTS4D3N15MC NTMTS4D3N15MC onsemi ntmts4d3n15mc-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
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NTMTSC4D3N15MC NTMTSC4D3N15MC onsemi ntmtsc4d3n15mc-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Produkt ist nicht verfügbar
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NTMTSC4D3N15MC NTMTSC4D3N15MC onsemi ntmtsc4d3n15mc-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
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NTMTSC1D5N08MC NTMTSC1D5N08MC onsemi ntmtsc1d5n08mc-d.pdf Description: MOSFET N-CH 80V 33A/287A 8DFNW
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Produkt ist nicht verfügbar
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NTMT190N65S3H NTMT190N65S3H onsemi ntmt190n65s3h-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
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NTMT190N65S3H NTMT190N65S3H onsemi ntmt190n65s3h-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Produkt ist nicht verfügbar
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NTMT150N65S3HF NTMT150N65S3HF onsemi ntmt150n65s3hf-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
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NTMT150N65S3HF NTMT150N65S3HF onsemi ntmt150n65s3hf-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
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NTMT125N65S3H NTMT125N65S3H onsemi ntmt125n65s3h-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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NTMT125N65S3H NTMT125N65S3H onsemi ntmt125n65s3h-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
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ADP32120091MNR2G ADP32120091MNR2G onsemi ONSMS24979-1.pdf?t.download=true&u=5oefqw Description: SWITCHING CONTROLLER
Packaging: Bulk
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ADP3212MNR2G ADP3212MNR2G onsemi adp3212-d.pdf Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
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ADP3212AMNR2G ADP3212AMNR2G onsemi adp3212a-d.pdf Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
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MC74HC75D MC74HC75D onsemi MOTOD158-3-92.pdf?t.download=true&u=5oefqw Description: 74HC75 - QUAD BISTABLE TRANSPARA
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MCR8M MCR8M onsemi ONSMD00047-284.pdf?t.download=true&u=5oefqw Description: THYRISTOR SCR 600V 80A
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SBC847CDXV6T1G SBC847CDXV6T1G onsemi bc847cdxv6t1-d.pdf Description: TRANS 2NPN 45V 100MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SBC847CDXV6T1G SBC847CDXV6T1G onsemi bc847cdxv6t1-d.pdf Description: TRANS 2NPN 45V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NL17SZ374DBVT1G NL17SZ374DBVT1G onsemi NL17SZ374.PDF Description: IC FF D-TYPE SNGL 1BIT SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 175 MHz
Input Capacitance: 4 pF
Supplier Device Package: SC-74
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Bits per Element: 1
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21000+0.07 EUR
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75000+0.061 EUR
150000+0.058 EUR
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SMSZ1600-18T3 SMSZ1600-18T3 onsemi Description: DIODE ZENER 0.5W SPCL SOD123
Packaging: Bulk
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PN4121 PN4121 onsemi 2N,PN,MPS,FTSO (8p).pdf Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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5LN01C-TB-E 5LN01C-TB-E onsemi 5LN01C.pdf Description: MOSFET N-CH 50V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
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NVMYS6D2N06CLTWG NVMYS6D2N06CLTWG onsemi nvmys6d2n06cl-d.pdf Description: MOSFET N-CH 60V 17A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
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500+0.98 EUR
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NVBLS0D5N04CTXG NVBLS0D5N04CTXG onsemi nvbls0d5n04c-d.pdf Description: MOSFET N-CH 40V 65A/300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 475µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Qualification: AEC-Q101
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SECO-RSL10-CAM-GEVB onsemi Description: -
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NCP500SQL28T1G NCP500SQL28T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 2.8V 150MA 6-DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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NCP500SQL27T1G NCP500SQL27T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 2.7V 150MA 6-DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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NCP500SN26T1G NCP500SN26T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 2.6V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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NCP500SN185T1G NCP500SN185T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 1.85V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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NCP500SN27T1G NCP500SN27T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 2.7V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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NCP51705MNTXG NCP51705MNTXG onsemi ncp51705-d.pdf Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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NCP51705MNTXG NCP51705MNTXG onsemi ncp51705-d.pdf Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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100+4.49 EUR
250+4.01 EUR
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1000+3.61 EUR
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CS5121KD16 onsemi Description: ANA BUCK NONSYNC NFET CTL
Packaging: Bulk
Part Status: Active
auf Bestellung 2559 Stücke:
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NIS6432MT2TWG NIS6432MT2TWG onsemi nis6432-d.pdf Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Produkt ist nicht verfügbar
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NIS6432MT2TWG NIS6432MT2TWG onsemi nis6432-d.pdf Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
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100+2.01 EUR
500+1.65 EUR
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NCV8164CSNADJT1G NCV8164CSNADJT1G onsemi NCV8164C-D.PDF Description: IC REG LIN POS ADJ 300MA 5TSOP
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NCV8164CSNADJT1G NCV8164CSNADJT1G onsemi NCV8164C-D.PDF Description: IC REG LIN POS ADJ 300MA 5TSOP
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NIS6432MT1TWG NIS6432MT1TWG onsemi nis6432-d.pdf Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NIS6432MT1TWG NIS6432MT1TWG onsemi nis6432-d.pdf Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
auf Bestellung 2950 Stücke:
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100+1.98 EUR
500+1.64 EUR
1000+1.29 EUR
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SMT10B260T3 onsemi Description: THY SMB SPECIAL SURGE
Packaging: Bulk
auf Bestellung 100000 Stücke:
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MMT05B260T3G MMT05B260T3G onsemi Description: THYRISTOR 200V 150A DO-214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
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MMT08B260T3G MMT08B260T3G onsemi MMT08B260T3.pdf Description: THYRISTOR 200V 250A DO-214AA
Packaging: Bulk
Capacitance: 55pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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MMT05B260T3 MMT05B260T3 onsemi Description: THYRISTOR 200V 150A DO-214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
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RE0208DA-TR-E INSL-S-A0001412437-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: DIODE 800V 200MA
Packaging: Bulk
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NCP5208DR2 ncp5208-d.pdf
NCP5208DR2
Hersteller: onsemi
Description: IC REG CTRLR DDR 2OUT 8SOIC
Supplier Device Package: 8-SOIC
Applications: Controller, DDR
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 1.7V ~ 5.5V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.9V, 1.25V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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NCV7341D21R2G ncv7341-d.pdf
NCV7341D21R2G
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Produkt ist nicht verfügbar
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MC100EL16DTR2G mc10el16-d.pdf
MC100EL16DTR2G
Hersteller: onsemi
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 4.2V ~ 5.7V
Supplier Device Package: 8-TSSOP
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NCP160AFCT350T2G ncp160-d.pdf
NCP160AFCT350T2G
Hersteller: onsemi
Description: IC REG LINEAR 3.5V 250MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.64x0.64)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Obsolete
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.14V @ 250mA
Protection Features: Over Current, Over Temperature, Soft Start
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29+0.62 EUR
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NCV33064P-5RPG mc34064-d.pdf
NCV33064P-5RPG
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Voltage - Threshold: 4.6V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FJV3113RMTF-ON ONSM-S-A0003587533-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: 0.1A, 50V, NPN
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
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FSAV433MTCX-ON ONSM-S-A0003588616-1.pdf?t.download=true&u=5oefqw
FSAV433MTCX-ON
Hersteller: onsemi
Description: IC SWITCH SP3T X 3 9OHM 20TSSOP
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 3pF, 4pF
Switch Time (Ton, Toff) (Max): 5.5ns, 4ns
Multiplexer/Demultiplexer Circuit: 3:1
Switch Circuit: SP3T
Crosstalk: -70dB @ 30MHz
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Supplier Device Package: 20-TSSOP
-3db Bandwidth: 550MHz
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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TIG064E8-TL-H-ON SSCLS00379-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: N-CHANNEL IGBT FOR LIGHT-CONTROL
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Supplier Device Package: 8-ECH
Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
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SCD317BTG
Hersteller: onsemi
Description: IC REG LINEAR ADJ 1.5A TO220
Packaging: Bulk
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QPA1223
Hersteller: onsemi
Description: EMITTER-DETECOR HERMETIC PAIR
Produkt ist nicht verfügbar
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NTMTSC002N10MCTXG ntmtsc002n10mc-d.pdf
NTMTSC002N10MCTXG
Hersteller: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
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NTMTSC002N10MCTXG ntmtsc002n10mc-d.pdf
NTMTSC002N10MCTXG
Hersteller: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5161 Stücke:
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2+9.31 EUR
10+6.56 EUR
100+4.91 EUR
500+4.44 EUR
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NTMTS6D0N15MC ntmts6d0n15mc-d.pdf
NTMTS6D0N15MC
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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NTMTS6D0N15MC ntmts6d0n15mc-d.pdf
NTMTS6D0N15MC
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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2+9.54 EUR
10+6.7 EUR
100+5.03 EUR
500+4.69 EUR
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NTMTSC1D6N10MCTXG ntmtsc1d6n10mc-d.pdf
NTMTSC1D6N10MCTXG
Hersteller: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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NTMTSC1D6N10MCTXG ntmtsc1d6n10mc-d.pdf
NTMTSC1D6N10MCTXG
Hersteller: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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2+11.05 EUR
10+7.47 EUR
100+5.61 EUR
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NTMTS4D3N15MC ntmts4d3n15mc-d.pdf
NTMTS4D3N15MC
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Produkt ist nicht verfügbar
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NTMTS4D3N15MC ntmts4d3n15mc-d.pdf
NTMTS4D3N15MC
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
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2+13.62 EUR
10+9.28 EUR
100+6.83 EUR
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NTMTSC4D3N15MC ntmtsc4d3n15mc-d.pdf
NTMTSC4D3N15MC
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Produkt ist nicht verfügbar
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NTMTSC4D3N15MC ntmtsc4d3n15mc-d.pdf
NTMTSC4D3N15MC
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
auf Bestellung 145 Stücke:
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2+11.88 EUR
10+8.03 EUR
100+5.86 EUR
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NTMTSC1D5N08MC ntmtsc1d5n08mc-d.pdf
NTMTSC1D5N08MC
Hersteller: onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Produkt ist nicht verfügbar
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NTMT190N65S3H ntmt190n65s3h-d.pdf
NTMT190N65S3H
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Produkt ist nicht verfügbar
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NTMT190N65S3H ntmt190n65s3h-d.pdf
NTMT190N65S3H
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Produkt ist nicht verfügbar
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NTMT150N65S3HF ntmt150n65s3hf-d.pdf
NTMT150N65S3HF
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
auf Bestellung 21000 Stücke:
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AnzahlPreis
3000+4.58 EUR
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NTMT150N65S3HF ntmt150n65s3hf-d.pdf
NTMT150N65S3HF
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
auf Bestellung 22825 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.76 EUR
10+7.96 EUR
100+5.81 EUR
500+5.6 EUR
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NTMT125N65S3H ntmt125n65s3h-d.pdf
NTMT125N65S3H
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMT125N65S3H ntmt125n65s3h-d.pdf
NTMT125N65S3H
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Produkt ist nicht verfügbar
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ADP32120091MNR2G ONSMS24979-1.pdf?t.download=true&u=5oefqw
ADP32120091MNR2G
Hersteller: onsemi
Description: SWITCHING CONTROLLER
Packaging: Bulk
auf Bestellung 181383 Stücke:
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AnzahlPreis
279+1.63 EUR
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ADP3212MNR2G adp3212-d.pdf
ADP3212MNR2G
Hersteller: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
auf Bestellung 957926 Stücke:
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AnzahlPreis
245+1.84 EUR
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ADP3212AMNR2G adp3212a-d.pdf
ADP3212AMNR2G
Hersteller: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
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AnzahlPreis
176+2.57 EUR
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MC74HC75D MOTOD158-3-92.pdf?t.download=true&u=5oefqw
MC74HC75D
Hersteller: onsemi
Description: 74HC75 - QUAD BISTABLE TRANSPARA
Produkt ist nicht verfügbar
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MCR8M ONSMD00047-284.pdf?t.download=true&u=5oefqw
MCR8M
Hersteller: onsemi
Description: THYRISTOR SCR 600V 80A
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AnzahlPreis
1202+0.41 EUR
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SBC847CDXV6T1G bc847cdxv6t1-d.pdf
SBC847CDXV6T1G
Hersteller: onsemi
Description: TRANS 2NPN 45V 100MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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AnzahlPreis
4000+0.16 EUR
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SBC847CDXV6T1G bc847cdxv6t1-d.pdf
SBC847CDXV6T1G
Hersteller: onsemi
Description: TRANS 2NPN 45V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4671 Stücke:
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AnzahlPreis
22+0.81 EUR
35+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
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NL17SZ374DBVT1G NL17SZ374.PDF
NL17SZ374DBVT1G
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 1BIT SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 175 MHz
Input Capacitance: 4 pF
Supplier Device Package: SC-74
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Bits per Element: 1
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.091 EUR
6000+0.082 EUR
9000+0.078 EUR
15000+0.073 EUR
21000+0.07 EUR
30000+0.067 EUR
75000+0.061 EUR
150000+0.058 EUR
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SMSZ1600-18T3
SMSZ1600-18T3
Hersteller: onsemi
Description: DIODE ZENER 0.5W SPCL SOD123
Packaging: Bulk
auf Bestellung 160000 Stücke:
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AnzahlPreis
11539+0.049 EUR
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PN4121 2N,PN,MPS,FTSO (8p).pdf
PN4121
Hersteller: onsemi
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
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5LN01C-TB-E 5LN01C.pdf
5LN01C-TB-E
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
auf Bestellung 573129 Stücke:
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AnzahlPreis
3122+0.15 EUR
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NVMYS6D2N06CLTWG nvmys6d2n06cl-d.pdf
NVMYS6D2N06CLTWG
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10519 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.92 EUR
10+1.85 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.9 EUR
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NVBLS0D5N04CTXG nvbls0d5n04c-d.pdf
NVBLS0D5N04CTXG
Hersteller: onsemi
Description: MOSFET N-CH 40V 65A/300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 475µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1106 Stücke:
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AnzahlPreis
2+15.56 EUR
10+10.69 EUR
100+8.12 EUR
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SECO-RSL10-CAM-GEVB
Hersteller: onsemi
Description: -
auf Bestellung 14 Stücke:
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NCP500SQL28T1G ncp500-d.pdf
NCP500SQL28T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 150MA 6-DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
auf Bestellung 41500 Stücke:
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AnzahlPreis
843+0.55 EUR
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NCP500SQL27T1G ncp500-d.pdf
NCP500SQL27T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.7V 150MA 6-DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
auf Bestellung 21000 Stücke:
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AnzahlPreis
843+0.55 EUR
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NCP500SN26T1G ncp500-d.pdf
NCP500SN26T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.6V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
827+0.55 EUR
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NCP500SN185T1G ncp500-d.pdf
NCP500SN185T1G
Hersteller: onsemi
Description: IC REG LINEAR 1.85V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
auf Bestellung 9000 Stücke:
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AnzahlPreis
827+0.55 EUR
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NCP500SN27T1G ncp500-d.pdf
NCP500SN27T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.7V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
827+0.55 EUR
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NCP51705MNTXG ncp51705-d.pdf
NCP51705MNTXG
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+3.61 EUR
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NCP51705MNTXG ncp51705-d.pdf
NCP51705MNTXG
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 14827 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.64 EUR
10+6.33 EUR
25+5.46 EUR
100+4.49 EUR
250+4.01 EUR
500+3.71 EUR
1000+3.61 EUR
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CS5121KD16
Hersteller: onsemi
Description: ANA BUCK NONSYNC NFET CTL
Packaging: Bulk
Part Status: Active
auf Bestellung 2559 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
197+2.49 EUR
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NIS6432MT2TWG nis6432-d.pdf
NIS6432MT2TWG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Produkt ist nicht verfügbar
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NIS6432MT2TWG nis6432-d.pdf
NIS6432MT2TWG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.78 EUR
10+2.5 EUR
100+2.01 EUR
500+1.65 EUR
1000+1.37 EUR
Mindestbestellmenge: 7 Stücke
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NCV8164CSNADJT1G NCV8164C-D.PDF
NCV8164CSNADJT1G
Hersteller: onsemi
Description: IC REG LIN POS ADJ 300MA 5TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NCV8164CSNADJT1G NCV8164C-D.PDF
NCV8164CSNADJT1G
Hersteller: onsemi
Description: IC REG LIN POS ADJ 300MA 5TSOP
auf Bestellung 2839 Stücke:
Lieferzeit 10-14 Tag (e)
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NIS6432MT1TWG nis6432-d.pdf
NIS6432MT1TWG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NIS6432MT1TWG nis6432-d.pdf
NIS6432MT1TWG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.83 EUR
10+2.54 EUR
100+1.98 EUR
500+1.64 EUR
1000+1.29 EUR
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SMT10B260T3
Hersteller: onsemi
Description: THY SMB SPECIAL SURGE
Packaging: Bulk
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11539+0.048 EUR
Mindestbestellmenge: 11539 Stücke
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MMT05B260T3G
MMT05B260T3G
Hersteller: onsemi
Description: THYRISTOR 200V 150A DO-214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1665+0.3 EUR
Mindestbestellmenge: 1665 Stücke
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MMT08B260T3G MMT08B260T3.pdf
MMT08B260T3G
Hersteller: onsemi
Description: THYRISTOR 200V 250A DO-214AA
Packaging: Bulk
Capacitance: 55pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1010+0.45 EUR
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MMT05B260T3
MMT05B260T3
Hersteller: onsemi
Description: THYRISTOR 200V 150A DO-214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
auf Bestellung 2465 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1402+0.35 EUR
Mindestbestellmenge: 1402 Stücke
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