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S10KC-AU_R1_006A1 S10KC-AU_R1_006A1 Panjit International Inc. S10KC-AU_S10MC-AU.pdf Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+0.39 EUR
1600+0.36 EUR
2400+0.33 EUR
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S10KC-AU_R1_006A1 S10KC-AU_R1_006A1 Panjit International Inc. S10KC-AU_S10MC-AU.pdf Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 3153 Stücke:
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17+1.3 EUR
25+0.84 EUR
100+0.67 EUR
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PJQ5451E-AU_R2_006A1 PJQ5451E-AU_R2_006A1 Panjit International Inc. PJQ5451E-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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PJQ5451E-AU_R2_006A1 PJQ5451E-AU_R2_006A1 Panjit International Inc. PJQ5451E-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3833 Stücke:
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13+1.7 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.8 EUR
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PJD70P03E-AU_L2_006A1 PJD70P03E-AU_L2_006A1 Panjit International Inc. PJD70P03E-AU Description: 30V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD70P03E-AU_L2_006A1 PJD70P03E-AU_L2_006A1 Panjit International Inc. PJD70P03E-AU Description: 30V P-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
auf Bestellung 2369 Stücke:
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15+1.49 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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PJD50N15S-AU_L2_006A1 PJD50N15S-AU_L2_006A1 Panjit International Inc. PJD50N15S-AU.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD50N15S-AU_L2_006A1 PJD50N15S-AU_L2_006A1 Panjit International Inc. PJD50N15S-AU.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
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10+3.96 EUR
100+2.76 EUR
500+2.37 EUR
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PJD90P03E-AU_L2_006A1 PJD90P03E-AU_L2_006A1 Panjit International Inc. PJD90P03E-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD90P03E-AU_L2_006A1 PJD90P03E-AU_L2_006A1 Panjit International Inc. PJD90P03E-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
auf Bestellung 2831 Stücke:
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100+3.13 EUR
500+2.77 EUR
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PJQ5449E-AU_R2_006A1 Panjit International Inc. Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJQ5449E-AU_R2_006A1 Panjit International Inc. Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 2778 Stücke:
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10+2.33 EUR
100+1.7 EUR
500+1.4 EUR
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PJD95P04E-AU_L2_006A1 Panjit International Inc. PJD95P04E-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD95P04E-AU_L2_006A1 Panjit International Inc. PJD95P04E-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
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10+2.61 EUR
100+1.87 EUR
500+1.56 EUR
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PJD75P04E-AU_L2_006A1 PJD75P04E-AU_L2_006A1 Panjit International Inc. PJD75P04E-AU Description: 40V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3477 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD75P04E-AU_L2_006A1 PJD75P04E-AU_L2_006A1 Panjit International Inc. PJD75P04E-AU Description: 40V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3477 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 75W (Tc)
auf Bestellung 2989 Stücke:
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5+4.44 EUR
10+3.14 EUR
100+2.32 EUR
500+1.96 EUR
1000+1.68 EUR
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3KP75A_R2_00001 3KP75A_R2_00001 Panjit International Inc. 3KP_SERIES.pdf Description: TVS DIODE 75VWM 121VC P600
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 121V
Voltage - Breakdown (Min): 83.3V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 75V
Current - Peak Pulse (10/1000µs): 24.8A
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PJB120N04V-AU_R2_002A1 Panjit International Inc. PJB120N04V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.92mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
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PJB120N04V-AU_R2_002A1 Panjit International Inc. PJB120N04V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.92mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 800 Stücke:
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10+4.37 EUR
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MBR29AFC_R1_00001 MBR29AFC_R1_00001 Panjit International Inc. MBR28AFC_SERIES.pdf Description: DIODE SCHOTTKY 90V 2A SMAFC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
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MBR39AFC_R1_00001 MBR39AFC_R1_00001 Panjit International Inc. MBR38AFC_SERIES.pdf Description: DIODE SCHOTTKY 90V 3A SMAFC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Produkt ist nicht verfügbar
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UF2006CT_T0_00001 UF2006CT_T0_00001 Panjit International Inc. UF2000CT_SERIES.pdf Description: DIODE ARRAY GP 600V 20A TO-220AB
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1979 Stücke:
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11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
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PSMQE090N08LS2_R2_00601 PSMQE090N08LS2_R2_00601 Panjit International Inc. PSMQE090N08LS2 Description: EXCELLENT FOM / 80V/8.7M / DFN33
Packaging: Tape & Reel (TR)
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5000+0.56 EUR
10000+0.52 EUR
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PSMQE090N08LS2_R2_00601 PSMQE090N08LS2_R2_00601 Panjit International Inc. PSMQE090N08LS2 Description: EXCELLENT FOM / 80V/8.7M / DFN33
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
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10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
2000+0.63 EUR
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S10KC_R1_00601 S10KC_R1_00601 Panjit International Inc. S10KC_S10MC.pdf Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1600 Stücke:
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800+0.31 EUR
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S10KC_R1_00601 S10KC_R1_00601 Panjit International Inc. S10KC_S10MC.pdf Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1795 Stücke:
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17+1.24 EUR
23+0.92 EUR
100+0.64 EUR
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S100W_R1_00001 S100W_R1_00001 Panjit International Inc. SS19W Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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S100W_R1_00001 S100W_R1_00001 Panjit International Inc. SS19W Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 425 Stücke:
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77+0.27 EUR
114+0.18 EUR
166+0.13 EUR
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S1KF_R1_00001 S1KF_R1_00001 Panjit International Inc. S1GF_SERIES.pdf Description: DIODE STANDARD 800V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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S1JF_R1_00001 S1JF_R1_00001 Panjit International Inc. S1GF_SERIES.pdf Description: DIODE STANDARD 600V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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S1GF_R1_00001 S1GF_R1_00001 Panjit International Inc. S1GF_SERIES.pdf Description: DIODE STANDARD 400V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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S1K_R1_00001 S1K_R1_00001 Panjit International Inc. S1A_SERIES.pdf Description: DIODE STANDARD 800V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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PJB240N04S7-AU_R2_002A1 Panjit International Inc. PJB240N04S7-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.52mOhm @ 90A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-263-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8398 pF @ 25 V
Qualification: AEC-Q101
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PJB240N04S7-AU_R2_002A1 Panjit International Inc. PJB240N04S7-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.52mOhm @ 90A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-263-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8398 pF @ 25 V
Qualification: AEC-Q101
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4+6.76 EUR
10+4.44 EUR
100+3.11 EUR
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PJB240N04V7-AU_R2_002A1 Panjit International Inc. PJB240N04V7-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 90A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-263-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 25 V
Qualification: AEC-Q101
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PJB240N04V7-AU_R2_002A1 Panjit International Inc. PJB240N04V7-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 90A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-263-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PEC4105CS_R1_00701 Panjit International Inc. Description: ESD PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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PEC4105CS_R1_00701 Panjit International Inc. Description: ESD PROTECTION
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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PEC4105AS_R1_00701 Panjit International Inc. Description: ESD PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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PEC4105AS_R1_00701 Panjit International Inc. Description: ESD PROTECTION
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ5239B_R1_00001 MMBZ5239B_R1_00001 Panjit International Inc. MMBZ5221B_SERIES.pdf Description: DIODE ZENER 9.1V 410MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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MMBZ5239B_R1_00001 MMBZ5239B_R1_00001 Panjit International Inc. MMBZ5221B_SERIES.pdf Description: DIODE ZENER 9.1V 410MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
auf Bestellung 2883 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.27 EUR
130+0.17 EUR
211+0.1 EUR
500+0.073 EUR
1000+0.063 EUR
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MMBZ5239BW_R1_00001 MMBZ5239BW_R1_00001 Panjit International Inc. MMBZ5221BW_SERIES.pdf Description: DIODE ZENER 9.1V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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MMBZ5239B-AU_R1_000A1 MMBZ5239B-AU_R1_000A1 Panjit International Inc. MMBZ5228B-AU_SERIES.pdf Description: DIODE ZENER 9.1V 410MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBZ5239BV_R1_00001 MMBZ5239BV_R1_00001 Panjit International Inc. MMBZ5221BV_SERIES.pdf Description: DIODE ZENER 9.1V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
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MMBZ5239BTW_R1_00001 MMBZ5239BTW_R1_00001 Panjit International Inc. MMBZ5221BTW_SERIES.pdf Description: DIODE ZENER ARRAY 9.1V SOT-363
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
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BCP56-16-AU_R2_007A1 BCP56-16-AU_R2_007A1 Panjit International Inc. BCP56-16-AU Description: NPN LOW VCE(SAT) TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCP56-16-AU_R2_007A1 BCP56-16-AU_R2_007A1 Panjit International Inc. BCP56-16-AU Description: NPN LOW VCE(SAT) TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
Qualification: AEC-Q101
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32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
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PM20025G-08QW_B0_00301 PM20025G-08QW_B0_00301 Panjit International Inc. PM20025G-08.pdf Description: MOTOR MCU WITH 3-PHASE 80V PRE D
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 10x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 36V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, PDR, POR, PWM, WDT
Supplier Device Package: 48-WQFN (6x6)
Number of I/O: 30
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PM20025G-08QW_B0_00301 PM20025G-08QW_B0_00301 Panjit International Inc. PM20025G-08.pdf Description: MOTOR MCU WITH 3-PHASE 80V PRE D
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 10x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 36V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, PDR, POR, PWM, WDT
Supplier Device Package: 48-WQFN (6x6)
Number of I/O: 30
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3+7.12 EUR
10+5.94 EUR
25+5.51 EUR
100+4.95 EUR
250+4.65 EUR
500+4.62 EUR
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SS3030HE_R1_00001 SS3030HE_R1_00001 Panjit International Inc. SS3020HE_SERIES.pdf Description: DIODE SCHOTTKY 30V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 160 µA @ 30 V
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SS3030HE_R1_00001 SS3030HE_R1_00001 Panjit International Inc. SS3020HE_SERIES.pdf Description: DIODE SCHOTTKY 30V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 160 µA @ 30 V
auf Bestellung 2955 Stücke:
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100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
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PJ74LVC1G04S5_R1_00301 PJ74LVC1G04S5_R1_00301 Panjit International Inc. PJ74LVC1G04S5 Description: SINGLE, INVERTERGATE
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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3000+0.045 EUR
6000+0.043 EUR
9000+0.042 EUR
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PJ74LVC1G04S5_R1_00301 PJ74LVC1G04S5_R1_00301 Panjit International Inc. PJ74LVC1G04S5 Description: SINGLE, INVERTERGATE
Packaging: Cut Tape (CT)
auf Bestellung 12000 Stücke:
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112+0.19 EUR
250+0.083 EUR
288+0.073 EUR
347+0.061 EUR
383+0.055 EUR
500+0.051 EUR
1000+0.049 EUR
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PJ74LVC1G04C5_R1_00301 PJ74LVC1G04C5_R1_00301 Panjit International Inc. PJ74LVC1G04C5 Description: SINGLE, INVERTERGATE
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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3000+0.046 EUR
6000+0.045 EUR
9000+0.044 EUR
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PJ74LVC1G04C5_R1_00301 PJ74LVC1G04C5_R1_00301 Panjit International Inc. PJ74LVC1G04C5 Description: SINGLE, INVERTERGATE
Packaging: Cut Tape (CT)
auf Bestellung 12000 Stücke:
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112+0.19 EUR
239+0.088 EUR
278+0.075 EUR
332+0.063 EUR
368+0.057 EUR
500+0.054 EUR
1000+0.05 EUR
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BCP53-16-AU_R2_007A1 BCP53-16-AU_R2_007A1 Panjit International Inc. BCP53-16-AU Description: PNP LOW VCE(SAT) TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+0.15 EUR
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BCP53-16-AU_R2_007A1 BCP53-16-AU_R2_007A1 Panjit International Inc. BCP53-16-AU Description: PNP LOW VCE(SAT) TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
Qualification: AEC-Q101
auf Bestellung 3737 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
50+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
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PJMBZ20A-AU_R1_007A1 PJMBZ20A-AU_R1_007A1 Panjit International Inc. PJMBZ5V6A-AU_SERIES.pdf Description: TVS DIODE 17VWM 28VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJMBZ20A-AU_R1_007A1 PJMBZ20A-AU_R1_007A1 Panjit International Inc. PJMBZ5V6A-AU_SERIES.pdf Description: TVS DIODE 17VWM 28VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S10KC-AU_R1_006A1 S10KC-AU_S10MC-AU.pdf
S10KC-AU_R1_006A1
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+0.39 EUR
1600+0.36 EUR
2400+0.33 EUR
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S10KC-AU_R1_006A1 S10KC-AU_S10MC-AU.pdf
S10KC-AU_R1_006A1
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 3153 Stücke:
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AnzahlPrivatkunde
17+1.3 EUR
25+0.84 EUR
100+0.67 EUR
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PJQ5451E-AU_R2_006A1 PJQ5451E-AU.pdf
PJQ5451E-AU_R2_006A1
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.7 EUR
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PJQ5451E-AU_R2_006A1 PJQ5451E-AU.pdf
PJQ5451E-AU_R2_006A1
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3833 Stücke:
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AnzahlPrivatkunde
8+2.7 EUR
13+1.7 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.8 EUR
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PJD70P03E-AU_L2_006A1 PJD70P03E-AU
PJD70P03E-AU_L2_006A1
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD70P03E-AU_L2_006A1 PJD70P03E-AU
PJD70P03E-AU_L2_006A1
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
auf Bestellung 2369 Stücke:
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AnzahlPrivatkunde
9+2.37 EUR
15+1.49 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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PJD50N15S-AU_L2_006A1 PJD50N15S-AU.pdf
PJD50N15S-AU_L2_006A1
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD50N15S-AU_L2_006A1 PJD50N15S-AU.pdf
PJD50N15S-AU_L2_006A1
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
auf Bestellung 2930 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.09 EUR
10+3.96 EUR
100+2.76 EUR
500+2.37 EUR
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PJD90P03E-AU_L2_006A1 PJD90P03E-AU.pdf
PJD90P03E-AU_L2_006A1
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJD90P03E-AU_L2_006A1 PJD90P03E-AU.pdf
PJD90P03E-AU_L2_006A1
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
auf Bestellung 2831 Stücke:
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AnzahlPrivatkunde
4+6.83 EUR
10+4.46 EUR
100+3.13 EUR
500+2.77 EUR
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PJQ5449E-AU_R2_006A1
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJQ5449E-AU_R2_006A1
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 2778 Stücke:
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AnzahlPrivatkunde
7+3.31 EUR
10+2.33 EUR
100+1.7 EUR
500+1.4 EUR
1000+1.25 EUR
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PJD95P04E-AU_L2_006A1 PJD95P04E-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJD95P04E-AU_L2_006A1 PJD95P04E-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.77 EUR
10+2.61 EUR
100+1.87 EUR
500+1.56 EUR
1000+1.37 EUR
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PJD75P04E-AU_L2_006A1 PJD75P04E-AU
PJD75P04E-AU_L2_006A1
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3477 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJD75P04E-AU_L2_006A1 PJD75P04E-AU
PJD75P04E-AU_L2_006A1
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3477 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 75W (Tc)
auf Bestellung 2989 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.44 EUR
10+3.14 EUR
100+2.32 EUR
500+1.96 EUR
1000+1.68 EUR
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3KP75A_R2_00001 3KP_SERIES.pdf
3KP75A_R2_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 75VWM 121VC P600
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 121V
Voltage - Breakdown (Min): 83.3V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 75V
Current - Peak Pulse (10/1000µs): 24.8A
Produkt ist nicht verfügbar
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PJB120N04V-AU_R2_002A1 PJB120N04V-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.92mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.37 EUR
Mindestbestellmenge: 800 Stücke
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PJB120N04V-AU_R2_002A1 PJB120N04V-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.92mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.68 EUR
10+4.37 EUR
100+3.06 EUR
Mindestbestellmenge: 4 Stücke
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MBR29AFC_R1_00001 MBR28AFC_SERIES.pdf
MBR29AFC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 90V 2A SMAFC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Produkt ist nicht verfügbar
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MBR39AFC_R1_00001 MBR38AFC_SERIES.pdf
MBR39AFC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 90V 3A SMAFC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Produkt ist nicht verfügbar
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UF2006CT_T0_00001 UF2000CT_SERIES.pdf
UF2006CT_T0_00001
Hersteller: Panjit International Inc.
Description: DIODE ARRAY GP 600V 20A TO-220AB
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1979 Stücke:
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AnzahlPrivatkunde
11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
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PSMQE090N08LS2_R2_00601 PSMQE090N08LS2
PSMQE090N08LS2_R2_00601
Hersteller: Panjit International Inc.
Description: EXCELLENT FOM / 80V/8.7M / DFN33
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
5000+0.56 EUR
10000+0.52 EUR
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PSMQE090N08LS2_R2_00601 PSMQE090N08LS2
PSMQE090N08LS2_R2_00601
Hersteller: Panjit International Inc.
Description: EXCELLENT FOM / 80V/8.7M / DFN33
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
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10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
2000+0.63 EUR
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S10KC_R1_00601 S10KC_S10MC.pdf
S10KC_R1_00601
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1600 Stücke:
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AnzahlPrivatkunde
800+0.31 EUR
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S10KC_R1_00601 S10KC_S10MC.pdf
S10KC_R1_00601
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1795 Stücke:
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AnzahlPrivatkunde
17+1.24 EUR
23+0.92 EUR
100+0.64 EUR
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S100W_R1_00001 SS19W
S100W_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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S100W_R1_00001 SS19W
S100W_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
114+0.18 EUR
166+0.13 EUR
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S1KF_R1_00001 S1GF_SERIES.pdf
S1KF_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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S1JF_R1_00001 S1GF_SERIES.pdf
S1JF_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 600V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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S1GF_R1_00001 S1GF_SERIES.pdf
S1GF_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 400V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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S1K_R1_00001 S1A_SERIES.pdf
S1K_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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PJB240N04S7-AU_R2_002A1 PJB240N04S7-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.52mOhm @ 90A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-263-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8398 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.42 EUR
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PJB240N04S7-AU_R2_002A1 PJB240N04S7-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.52mOhm @ 90A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-263-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8398 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.76 EUR
10+4.44 EUR
100+3.11 EUR
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PJB240N04V7-AU_R2_002A1 PJB240N04V7-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 90A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-263-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJB240N04V7-AU_R2_002A1 PJB240N04V7-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 90A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-263-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PEC4105CS_R1_00701
Hersteller: Panjit International Inc.
Description: ESD PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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PEC4105CS_R1_00701
Hersteller: Panjit International Inc.
Description: ESD PROTECTION
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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PEC4105AS_R1_00701
Hersteller: Panjit International Inc.
Description: ESD PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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PEC4105AS_R1_00701
Hersteller: Panjit International Inc.
Description: ESD PROTECTION
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ5239B_R1_00001 MMBZ5221B_SERIES.pdf
MMBZ5239B_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER 9.1V 410MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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MMBZ5239B_R1_00001 MMBZ5221B_SERIES.pdf
MMBZ5239B_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER 9.1V 410MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
auf Bestellung 2883 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
130+0.17 EUR
211+0.1 EUR
500+0.073 EUR
1000+0.063 EUR
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MMBZ5239BW_R1_00001 MMBZ5221BW_SERIES.pdf
MMBZ5239BW_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER 9.1V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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MMBZ5239B-AU_R1_000A1 MMBZ5228B-AU_SERIES.pdf
MMBZ5239B-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: DIODE ZENER 9.1V 410MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBZ5239BV_R1_00001 MMBZ5221BV_SERIES.pdf
MMBZ5239BV_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER 9.1V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
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MMBZ5239BTW_R1_00001 MMBZ5221BTW_SERIES.pdf
MMBZ5239BTW_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER ARRAY 9.1V SOT-363
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
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BCP56-16-AU_R2_007A1 BCP56-16-AU
BCP56-16-AU_R2_007A1
Hersteller: Panjit International Inc.
Description: NPN LOW VCE(SAT) TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BCP56-16-AU_R2_007A1 BCP56-16-AU
BCP56-16-AU_R2_007A1
Hersteller: Panjit International Inc.
Description: NPN LOW VCE(SAT) TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
Qualification: AEC-Q101
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32 Stücke
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PM20025G-08QW_B0_00301 PM20025G-08.pdf
PM20025G-08QW_B0_00301
Hersteller: Panjit International Inc.
Description: MOTOR MCU WITH 3-PHASE 80V PRE D
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 10x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 36V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, PDR, POR, PWM, WDT
Supplier Device Package: 48-WQFN (6x6)
Number of I/O: 30
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4900+4.03 EUR
Mindestbestellmenge: 4900 Stücke
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PM20025G-08QW_B0_00301 PM20025G-08.pdf
PM20025G-08QW_B0_00301
Hersteller: Panjit International Inc.
Description: MOTOR MCU WITH 3-PHASE 80V PRE D
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 10x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 36V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, PDR, POR, PWM, WDT
Supplier Device Package: 48-WQFN (6x6)
Number of I/O: 30
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.12 EUR
10+5.94 EUR
25+5.51 EUR
100+4.95 EUR
250+4.65 EUR
500+4.62 EUR
Mindestbestellmenge: 3 Stücke
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SS3030HE_R1_00001 SS3020HE_SERIES.pdf
SS3030HE_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 3A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 160 µA @ 30 V
Produkt ist nicht verfügbar
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SS3030HE_R1_00001 SS3020HE_SERIES.pdf
SS3030HE_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 3A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 160 µA @ 30 V
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 38 Stücke
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PJ74LVC1G04S5_R1_00301 PJ74LVC1G04S5
PJ74LVC1G04S5_R1_00301
Hersteller: Panjit International Inc.
Description: SINGLE, INVERTERGATE
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.045 EUR
6000+0.043 EUR
9000+0.042 EUR
Mindestbestellmenge: 3000 Stücke
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PJ74LVC1G04S5_R1_00301 PJ74LVC1G04S5
PJ74LVC1G04S5_R1_00301
Hersteller: Panjit International Inc.
Description: SINGLE, INVERTERGATE
Packaging: Cut Tape (CT)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
250+0.083 EUR
288+0.073 EUR
347+0.061 EUR
383+0.055 EUR
500+0.051 EUR
1000+0.049 EUR
Mindestbestellmenge: 112 Stücke
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PJ74LVC1G04C5_R1_00301 PJ74LVC1G04C5
PJ74LVC1G04C5_R1_00301
Hersteller: Panjit International Inc.
Description: SINGLE, INVERTERGATE
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.046 EUR
6000+0.045 EUR
9000+0.044 EUR
Mindestbestellmenge: 3000 Stücke
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PJ74LVC1G04C5_R1_00301 PJ74LVC1G04C5
PJ74LVC1G04C5_R1_00301
Hersteller: Panjit International Inc.
Description: SINGLE, INVERTERGATE
Packaging: Cut Tape (CT)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
239+0.088 EUR
278+0.075 EUR
332+0.063 EUR
368+0.057 EUR
500+0.054 EUR
1000+0.05 EUR
Mindestbestellmenge: 112 Stücke
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BCP53-16-AU_R2_007A1 BCP53-16-AU
BCP53-16-AU_R2_007A1
Hersteller: Panjit International Inc.
Description: PNP LOW VCE(SAT) TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.15 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCP53-16-AU_R2_007A1 BCP53-16-AU
BCP53-16-AU_R2_007A1
Hersteller: Panjit International Inc.
Description: PNP LOW VCE(SAT) TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
Qualification: AEC-Q101
auf Bestellung 3737 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
50+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 32 Stücke
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PJMBZ20A-AU_R1_007A1 PJMBZ5V6A-AU_SERIES.pdf
PJMBZ20A-AU_R1_007A1
Hersteller: Panjit International Inc.
Description: TVS DIODE 17VWM 28VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJMBZ20A-AU_R1_007A1 PJMBZ5V6A-AU_SERIES.pdf
PJMBZ20A-AU_R1_007A1
Hersteller: Panjit International Inc.
Description: TVS DIODE 17VWM 28VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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