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ER1EAFC_R1_00001 ER1EAFC_R1_00001 Panjit International Inc. ER1AAFC_SERIES.pdf Description: DIODE GEN PURP 300V 1A SMAF-C
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
ER1EAFC_R1_00001 ER1EAFC_R1_00001 Panjit International Inc. ER1AAFC_SERIES.pdf Description: DIODE GEN PURP 300V 1A SMAF-C
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
PCDH2065CCGC_T0_00601 Panjit International Inc. PCDH2065CCGC.pdf Description: DIODE ARR SIC 650V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.09 EUR
30+ 8.85 EUR
120+ 7.92 EUR
510+ 6.99 EUR
1020+ 6.29 EUR
Mindestbestellmenge: 2
PCDH2065CCGB_T0_00601 PCDH2065CCGB_T0_00601 Panjit International Inc. PCDH2065CCGB.pdf Description: DIODE ARR SIC 650V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.01 EUR
30+ 15.18 EUR
120+ 13.58 EUR
510+ 11.98 EUR
1020+ 10.79 EUR
PCDD1065G1_L2_00001 PCDD1065G1_L2_00001 Panjit International Inc. PCDD1065G1.pdf Description: DIODE SIL CARB 650V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.36 EUR
Mindestbestellmenge: 3000
PCDD1065G1_L2_00001 PCDD1065G1_L2_00001 Panjit International Inc. PCDD1065G1.pdf Description: DIODE SIL CARB 650V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.88 EUR
10+ 5.79 EUR
100+ 4.68 EUR
500+ 4.16 EUR
1000+ 3.57 EUR
Mindestbestellmenge: 3
P4SMA56CAS_R1_00001 P4SMA56CAS_R1_00001 Panjit International Inc. P4SMA10AS_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.15 EUR
Mindestbestellmenge: 1800
P4SMA56CAS_R1_00001 P4SMA56CAS_R1_00001 Panjit International Inc. P4SMA10AS_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+ 0.45 EUR
100+ 0.22 EUR
500+ 0.2 EUR
Mindestbestellmenge: 28
P4SMA56AS_R1_00001 P4SMA56AS_R1_00001 Panjit International Inc. P4SMA10AS_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA56AS_R1_00001 P4SMA56AS_R1_00001 Panjit International Inc. P4SMA10AS_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+ 0.45 EUR
100+ 0.22 EUR
500+ 0.2 EUR
Mindestbestellmenge: 28
P4SMA56A_R1_00001 P4SMA56A_R1_00001 Panjit International Inc. P4SMA_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.26 EUR
Mindestbestellmenge: 1800
P4SMA56A_R1_00001 P4SMA56A_R1_00001 Panjit International Inc. P4SMA_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
500+ 0.32 EUR
Mindestbestellmenge: 26
PCDD1065GB_L2_00601 PCDD1065GB_L2_00601 Panjit International Inc. PCDD1065GB.pdf Description: 650V/10A IN TO-252AA PACKAGE SIL
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 610pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.15 EUR
Mindestbestellmenge: 3000
PCDD1065GB_L2_00601 PCDD1065GB_L2_00601 Panjit International Inc. PCDD1065GB.pdf Description: 650V/10A IN TO-252AA PACKAGE SIL
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 610pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.54 EUR
10+ 7.16 EUR
100+ 5.8 EUR
500+ 5.15 EUR
1000+ 4.41 EUR
Mindestbestellmenge: 3
PCDP1065GB_T0_00601 PCDP1065GB_T0_00601 Panjit International Inc. PCDP1065GB.pdf Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 446pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.01 EUR
50+ 7.94 EUR
100+ 6.81 EUR
500+ 6.05 EUR
1000+ 5.18 EUR
Mindestbestellmenge: 2
SB640F_T0_00001 SB640F_T0_00001 Panjit International Inc. SB620F_SERIES.pdf Description: DIODE SCHOTTKY 40V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 1806 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
50+ 0.87 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 17
SB840F_T0_00001 SB840F_T0_00001 Panjit International Inc. SB820F_SERIES.pdf Description: DIODE SCHOTTKY 40V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 1289 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
50+ 1.29 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 12
ER803_T0_00001 ER803_T0_00001 Panjit International Inc. ER800_SERIES.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
50+ 0.93 EUR
100+ 0.67 EUR
500+ 0.56 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
SBA0840CS-AU_R1_000A1 SBA0840CS-AU_R1_000A1 Panjit International Inc. SBA0820CS-AU_SERIES.pdf Description: DIODE SCHOTTKY 40V 800MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.093 EUR
10000+ 0.081 EUR
Mindestbestellmenge: 5000
SBA0840CS-AU_R1_000A1 SBA0840CS-AU_R1_000A1 Panjit International Inc. SBA0820CS-AU_SERIES.pdf Description: DIODE SCHOTTKY 40V 800MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 14090 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
47+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
2000+ 0.098 EUR
Mindestbestellmenge: 33
MB810_R1_00001 MB810_R1_00001 Panjit International Inc. MB810.pdf Description: DIODE SCHOTTKY 100V 8A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
MB810_R1_00001 MB810_R1_00001 Panjit International Inc. MB810.pdf Description: DIODE SCHOTTKY 100V 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
23+ 0.8 EUR
100+ 0.55 EUR
Mindestbestellmenge: 19
1.5SMCJ10A_R1_00001 1.5SMCJ10A_R1_00001 Panjit International Inc. 1.5SMCJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 88.2A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+0.51 EUR
Mindestbestellmenge: 800
1.5SMCJ10A_R1_00001 1.5SMCJ10A_R1_00001 Panjit International Inc. 1.5SMCJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 88.2A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.88 EUR
100+ 0.61 EUR
Mindestbestellmenge: 18
3KP18CA_R2_00001 3KP18CA_R2_00001 Panjit International Inc. 3KP_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
3KP18CA_R2_00001 3KP18CA_R2_00001 Panjit International Inc. 3KP_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
2EZ10_R2_00001 2EZ10_R2_00001 Panjit International Inc. 2EZ6.8_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-15
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
Produkt ist nicht verfügbar
2EZ10_R2_00001 2EZ10_R2_00001 Panjit International Inc. 2EZ6.8_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-15
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
Produkt ist nicht verfügbar
SB230_R2_00001 SB230_R2_00001 Panjit International Inc. SB220_SERIES.pdf Description: DIODE SCHOTTKY 30V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
SB230_R2_00001 SB230_R2_00001 Panjit International Inc. SB220_SERIES.pdf Description: DIODE SCHOTTKY 30V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
PJQ5413_R2_00001 PJQ5413_R2_00001 Panjit International Inc. PJQ5413.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Produkt ist nicht verfügbar
1.5KE30CA_R2_00001 1.5KE30CA_R2_00001 Panjit International Inc. 1.5KE_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
P6KE82CA_R2_00001 P6KE82CA_R2_00001 Panjit International Inc. P6KE_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
1N4744A_R2_00001 1N4744A_R2_00001 Panjit International Inc. 1N4728A_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 nA @ 11.4 V
Produkt ist nicht verfügbar
1.5KE180CA_R2_00001 1.5KE180CA_R2_00001 Panjit International Inc. 1.5KE_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1N5819_R2_00001 1N5819_R2_00001 Panjit International Inc. 1N5817_SERIES.pdf Description: SCHOTTKY BARRIER RECTIFIERS
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
1N4748A_R2_00001 1N4748A_R2_00001 Panjit International Inc. 1N4728A_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 nA @ 16.7 V
Produkt ist nicht verfügbar
PG202R_R2_00001 PG202R_R2_00001 Panjit International Inc. PG200R_SERIES.pdf Description: GLASS PASSIVATED JUNCTION FAST S
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
ER106_R2_00001 ER106_R2_00001 Panjit International Inc. ER100_SERIES.pdf Description: SUPERFAST RECOVERY RECTIFIERS
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5359B_R2_00001 1N5359B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Produkt ist nicht verfügbar
1N5349B_R2_00001 1N5349B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 2 µA @ 9.1 V
Produkt ist nicht verfügbar
1N5351B_R2_00001 1N5351B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 10.6 V
Produkt ist nicht verfügbar
1N5818_R2_00001 1N5818_R2_00001 Panjit International Inc. 1N5817_SERIES.pdf Description: SCHOTTKY BARRIER RECTIFIERS
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
ER206_R2_00001 ER206_R2_00001 Panjit International Inc. ER200_SERIES.pdf Description: GLASS PASSIVATED SUPERFAST RECOV
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5339B_R2_00001 1N5339B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Produkt ist nicht verfügbar
1N5338B_R2_00001 1N5338B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
1N5342B_R2_00001 1N5342B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Produkt ist nicht verfügbar
1N5344B_R2_00001 1N5344B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 6.2 V
Produkt ist nicht verfügbar
1N5350B_R2_00001 1N5350B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
Produkt ist nicht verfügbar
1N5358B_R2_00001 1N5358B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Produkt ist nicht verfügbar
1N5348B_R2_00001 1N5348B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Produkt ist nicht verfügbar
1N5364B_R2_00001 1N5364B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
Produkt ist nicht verfügbar
1N5363B_R2_00001 1N5363B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
Produkt ist nicht verfügbar
1N5365B_R2_00001 1N5365B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V
Produkt ist nicht verfügbar
1N5366B_R2_00001 1N5366B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 29.7 V
Produkt ist nicht verfügbar
1N5345B_R2_00001 1N5345B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 6.6 V
Produkt ist nicht verfügbar
1N5361B_R2_00001 1N5361B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
Produkt ist nicht verfügbar
1N5354B_R2_00001 1N5354B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 12.9 V
Produkt ist nicht verfügbar
1N5347B_R2_00001 1N5347B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 5 µA @ 7.6 V
Produkt ist nicht verfügbar
1N5368B_R2_00001 1N5368B_R2_00001 Panjit International Inc. 1N5338B_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
Produkt ist nicht verfügbar
ER1EAFC_R1_00001 ER1AAFC_SERIES.pdf
ER1EAFC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 300V 1A SMAF-C
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
ER1EAFC_R1_00001 ER1AAFC_SERIES.pdf
ER1EAFC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 300V 1A SMAF-C
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
PCDH2065CCGC_T0_00601 PCDH2065CCGC.pdf
Hersteller: Panjit International Inc.
Description: DIODE ARR SIC 650V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.09 EUR
30+ 8.85 EUR
120+ 7.92 EUR
510+ 6.99 EUR
1020+ 6.29 EUR
Mindestbestellmenge: 2
PCDH2065CCGB_T0_00601 PCDH2065CCGB.pdf
PCDH2065CCGB_T0_00601
Hersteller: Panjit International Inc.
Description: DIODE ARR SIC 650V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.01 EUR
30+ 15.18 EUR
120+ 13.58 EUR
510+ 11.98 EUR
1020+ 10.79 EUR
PCDD1065G1_L2_00001 PCDD1065G1.pdf
PCDD1065G1_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 650V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.36 EUR
Mindestbestellmenge: 3000
PCDD1065G1_L2_00001 PCDD1065G1.pdf
PCDD1065G1_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 650V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.88 EUR
10+ 5.79 EUR
100+ 4.68 EUR
500+ 4.16 EUR
1000+ 3.57 EUR
Mindestbestellmenge: 3
P4SMA56CAS_R1_00001 P4SMA10AS_SERIES.pdf
P4SMA56CAS_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.15 EUR
Mindestbestellmenge: 1800
P4SMA56CAS_R1_00001 P4SMA10AS_SERIES.pdf
P4SMA56CAS_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
40+ 0.45 EUR
100+ 0.22 EUR
500+ 0.2 EUR
Mindestbestellmenge: 28
P4SMA56AS_R1_00001 P4SMA10AS_SERIES.pdf
P4SMA56AS_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA56AS_R1_00001 P4SMA10AS_SERIES.pdf
P4SMA56AS_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
40+ 0.45 EUR
100+ 0.22 EUR
500+ 0.2 EUR
Mindestbestellmenge: 28
P4SMA56A_R1_00001 P4SMA_SERIES.pdf
P4SMA56A_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.26 EUR
Mindestbestellmenge: 1800
P4SMA56A_R1_00001 P4SMA_SERIES.pdf
P4SMA56A_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
500+ 0.32 EUR
Mindestbestellmenge: 26
PCDD1065GB_L2_00601 PCDD1065GB.pdf
PCDD1065GB_L2_00601
Hersteller: Panjit International Inc.
Description: 650V/10A IN TO-252AA PACKAGE SIL
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 610pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+4.15 EUR
Mindestbestellmenge: 3000
PCDD1065GB_L2_00601 PCDD1065GB.pdf
PCDD1065GB_L2_00601
Hersteller: Panjit International Inc.
Description: 650V/10A IN TO-252AA PACKAGE SIL
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 610pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.54 EUR
10+ 7.16 EUR
100+ 5.8 EUR
500+ 5.15 EUR
1000+ 4.41 EUR
Mindestbestellmenge: 3
PCDP1065GB_T0_00601 PCDP1065GB.pdf
PCDP1065GB_T0_00601
Hersteller: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 446pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.01 EUR
50+ 7.94 EUR
100+ 6.81 EUR
500+ 6.05 EUR
1000+ 5.18 EUR
Mindestbestellmenge: 2
SB640F_T0_00001 SB620F_SERIES.pdf
SB640F_T0_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 1806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.06 EUR
50+ 0.87 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 17
SB840F_T0_00001 SB820F_SERIES.pdf
SB840F_T0_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 1289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.57 EUR
50+ 1.29 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 12
ER803_T0_00001 ER800_SERIES.pdf
ER803_T0_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.13 EUR
50+ 0.93 EUR
100+ 0.67 EUR
500+ 0.56 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
SBA0840CS-AU_R1_000A1 SBA0820CS-AU_SERIES.pdf
SBA0840CS-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 800MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.093 EUR
10000+ 0.081 EUR
Mindestbestellmenge: 5000
SBA0840CS-AU_R1_000A1 SBA0820CS-AU_SERIES.pdf
SBA0840CS-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 800MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 14090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
47+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
2000+ 0.098 EUR
Mindestbestellmenge: 33
MB810_R1_00001 MB810.pdf
MB810_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 8A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
MB810_R1_00001 MB810.pdf
MB810_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
23+ 0.8 EUR
100+ 0.55 EUR
Mindestbestellmenge: 19
1.5SMCJ10A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ10A_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 88.2A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+0.51 EUR
Mindestbestellmenge: 800
1.5SMCJ10A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ10A_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 88.2A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.88 EUR
100+ 0.61 EUR
Mindestbestellmenge: 18
3KP18CA_R2_00001 3KP_SERIES.pdf
3KP18CA_R2_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
3KP18CA_R2_00001 3KP_SERIES.pdf
3KP18CA_R2_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
2EZ10_R2_00001 2EZ6.8_SERIES.pdf
2EZ10_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-15
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
Produkt ist nicht verfügbar
2EZ10_R2_00001 2EZ6.8_SERIES.pdf
2EZ10_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-15
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
Produkt ist nicht verfügbar
SB230_R2_00001 SB220_SERIES.pdf
SB230_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
SB230_R2_00001 SB220_SERIES.pdf
SB230_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
PJQ5413_R2_00001 PJQ5413.pdf
PJQ5413_R2_00001
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Produkt ist nicht verfügbar
1.5KE30CA_R2_00001 1.5KE_SERIES.pdf
1.5KE30CA_R2_00001
Hersteller: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
P6KE82CA_R2_00001 P6KE_SERIES.pdf
P6KE82CA_R2_00001
Hersteller: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
1N4744A_R2_00001 1N4728A_SERIES.pdf
1N4744A_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 nA @ 11.4 V
Produkt ist nicht verfügbar
1.5KE180CA_R2_00001 1.5KE_SERIES.pdf
1.5KE180CA_R2_00001
Hersteller: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1N5819_R2_00001 1N5817_SERIES.pdf
1N5819_R2_00001
Hersteller: Panjit International Inc.
Description: SCHOTTKY BARRIER RECTIFIERS
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
1N4748A_R2_00001 1N4728A_SERIES.pdf
1N4748A_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 nA @ 16.7 V
Produkt ist nicht verfügbar
PG202R_R2_00001 PG200R_SERIES.pdf
PG202R_R2_00001
Hersteller: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION FAST S
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
ER106_R2_00001 ER100_SERIES.pdf
ER106_R2_00001
Hersteller: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5359B_R2_00001 1N5338B_SERIES.pdf
1N5359B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Produkt ist nicht verfügbar
1N5349B_R2_00001 1N5338B_SERIES.pdf
1N5349B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 2 µA @ 9.1 V
Produkt ist nicht verfügbar
1N5351B_R2_00001 1N5338B_SERIES.pdf
1N5351B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 10.6 V
Produkt ist nicht verfügbar
1N5818_R2_00001 1N5817_SERIES.pdf
1N5818_R2_00001
Hersteller: Panjit International Inc.
Description: SCHOTTKY BARRIER RECTIFIERS
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
ER206_R2_00001 ER200_SERIES.pdf
ER206_R2_00001
Hersteller: Panjit International Inc.
Description: GLASS PASSIVATED SUPERFAST RECOV
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5339B_R2_00001 1N5338B_SERIES.pdf
1N5339B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Produkt ist nicht verfügbar
1N5338B_R2_00001 1N5338B_SERIES.pdf
1N5338B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
1N5342B_R2_00001 1N5338B_SERIES.pdf
1N5342B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Produkt ist nicht verfügbar
1N5344B_R2_00001 1N5338B_SERIES.pdf
1N5344B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 6.2 V
Produkt ist nicht verfügbar
1N5350B_R2_00001 1N5338B_SERIES.pdf
1N5350B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
Produkt ist nicht verfügbar
1N5358B_R2_00001 1N5338B_SERIES.pdf
1N5358B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Produkt ist nicht verfügbar
1N5348B_R2_00001 1N5338B_SERIES.pdf
1N5348B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Produkt ist nicht verfügbar
1N5364B_R2_00001 1N5338B_SERIES.pdf
1N5364B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
Produkt ist nicht verfügbar
1N5363B_R2_00001 1N5338B_SERIES.pdf
1N5363B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
Produkt ist nicht verfügbar
1N5365B_R2_00001 1N5338B_SERIES.pdf
1N5365B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V
Produkt ist nicht verfügbar
1N5366B_R2_00001 1N5338B_SERIES.pdf
1N5366B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 29.7 V
Produkt ist nicht verfügbar
1N5345B_R2_00001 1N5338B_SERIES.pdf
1N5345B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 6.6 V
Produkt ist nicht verfügbar
1N5361B_R2_00001 1N5338B_SERIES.pdf
1N5361B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
Produkt ist nicht verfügbar
1N5354B_R2_00001 1N5338B_SERIES.pdf
1N5354B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 12.9 V
Produkt ist nicht verfügbar
1N5347B_R2_00001 1N5338B_SERIES.pdf
1N5347B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 5 µA @ 7.6 V
Produkt ist nicht verfügbar
1N5368B_R2_00001 1N5338B_SERIES.pdf
1N5368B_R2_00001
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-201AE
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
Produkt ist nicht verfügbar
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