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SR24-AU_R1_000A1 SR24-AU_R1_000A1 Panjit International Inc. SR24-AU.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 98pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3563 Stücke:
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17+1.26 EUR
28+0.77 EUR
100+0.5 EUR
500+0.38 EUR
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SR24_R1_00001 SR24_R1_00001 Panjit International Inc. SR22_SERIES.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3600 Stücke:
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1800+0.092 EUR
3600+0.089 EUR
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SR24_R1_00001 SR24_R1_00001 Panjit International Inc. SR22_SERIES.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 7030 Stücke:
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48+0.44 EUR
69+0.31 EUR
100+0.23 EUR
500+0.18 EUR
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BZT52-B4V7_R1_00001 BZT52-B4V7_R1_00001 Panjit International Inc. BZT52-B2V4_SERIES.pdf Description: SOD-123, ZENER
Tolerance: ±1.91%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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6000+0.071 EUR
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BZT52-B4V7_R1_00001 BZT52-B4V7_R1_00001 Panjit International Inc. BZT52-B2V4_SERIES.pdf Description: SOD-123, ZENER
Tolerance: ±1.91%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 8606 Stücke:
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48+0.44 EUR
52+0.4 EUR
100+0.23 EUR
500+0.13 EUR
1000+0.093 EUR
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SM8S36A-AU_R2_000A1 SM8S36A-AU_R2_000A1 Panjit International Inc. SM8S14A-AU_SERIES.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM8S36A-AU_R2_000A1 SM8S36A-AU_R2_000A1 Panjit International Inc. SM8S14A-AU_SERIES.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 171 Stücke:
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10+5.77 EUR
50+4.49 EUR
100+4.07 EUR
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PEC1305S1Q_R1_00001 PEC1305S1Q_R1_00001 Panjit International Inc. PEC1305S1Q.pdf Description: ULTRA LOW CAPACITANCE ESD PROTEC
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power Line Protection: No
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PEC1305S1Q_R1_00001 PEC1305S1Q_R1_00001 Panjit International Inc. PEC1305S1Q.pdf Description: ULTRA LOW CAPACITANCE ESD PROTEC
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMB200AS_R1_00001 P6SMB200AS_R1_00001 Panjit International Inc. P6SMB10AS_SERIES.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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800+0.23 EUR
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ES1A_R1_00001 ES1A_R1_00001 Panjit International Inc. ES1A_SERIES.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
auf Bestellung 1577 Stücke:
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32+0.67 EUR
52+0.4 EUR
72+0.3 EUR
100+0.26 EUR
500+0.19 EUR
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PBHV9110DA-AU_R1_000A1 PBHV9110DA-AU_R1_000A1 Panjit International Inc. PBHV9110DA.pdf Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PBHV9110DA-AU_R1_000A1 PBHV9110DA-AU_R1_000A1 Panjit International Inc. PBHV9110DA.pdf Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Qualification: AEC-Q101
auf Bestellung 1192 Stücke:
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46+0.46 EUR
74+0.29 EUR
119+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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2SD1781A_R1_00001 2SD1781A_R1_00001 Panjit International Inc. 2SD1781A.pdf Description: TRANS NPN 50V 3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.25 W
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2SD1781A_R1_00001 2SD1781A_R1_00001 Panjit International Inc. 2SD1781A.pdf Description: TRANS NPN 50V 3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.25 W
auf Bestellung 7256 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
41+0.51 EUR
100+0.32 EUR
500+0.25 EUR
1000+0.21 EUR
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PJL9480_R2_00001 PJL9480_R2_00001 Panjit International Inc. PJL9480.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
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PJL9480_R2_00001 PJL9480_R2_00001 Panjit International Inc. PJL9480.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
auf Bestellung 2170 Stücke:
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9+2.34 EUR
14+1.58 EUR
100+1.11 EUR
500+0.89 EUR
1000+0.82 EUR
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PJQ5494_R2_00001 Panjit International Inc. Description: 150V N-CHANNEL ENHANCEMENT MODE
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PJQ5494_R2_00001 Panjit International Inc. Description: 150V N-CHANNEL ENHANCEMENT MODE
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PJD30N15_L2_00001 PJD30N15_L2_00001 Panjit International Inc. PJD30N15.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
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PJD30N15_L2_00001 PJD30N15_L2_00001 Panjit International Inc. PJD30N15.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
auf Bestellung 2966 Stücke:
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9+2.48 EUR
13+1.67 EUR
100+1.17 EUR
500+0.94 EUR
1000+0.86 EUR
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PJD40N15_L2_00001 PJD40N15_L2_00001 Panjit International Inc. PJD40N15.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
Produkt ist nicht verfügbar
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PJQ2800_R1_00001 Panjit International Inc. Description: 20V N-CHANNEL ENHANCEMENT MODE M
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PJQ2800_R1_00001 Panjit International Inc. Description: 20V N-CHANNEL ENHANCEMENT MODE M
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PJX138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJX138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT7802_S1_00001 PJT7802_S1_00001 Panjit International Inc. PJT7802.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
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PJT7802_S1_00001 PJT7802_S1_00001 Panjit International Inc. PJT7802.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
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PJX8808_R1_00001 PJX8808_R1_00001 Panjit International Inc. PJX8808.pdf Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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PJX8808_R1_00001 PJX8808_R1_00001 Panjit International Inc. PJX8808.pdf Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 28 Stücke:
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PJW7N04-AU_R2_000A1 Panjit International Inc. Description: 40V N-CHANNEL ENHANCEMENT MODE M
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PJW7N04-AU_R2_000A1 Panjit International Inc. Description: 40V N-CHANNEL ENHANCEMENT MODE M
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PJT138K_R1_00001 PJT138K_R1_00001 Panjit International Inc. PJT138K.pdf Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 236mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
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PJT138K_R1_00001 PJT138K_R1_00001 Panjit International Inc. PJT138K.pdf Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 236mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
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102+0.2 EUR
196+0.11 EUR
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PJA3416-AU_R1_000A1 PJA3416-AU_R1_000A1 Panjit International Inc. PJA3416-AU.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Qualification: AEC-Q101
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PJA3416-AU_R1_000A1 PJA3416-AU_R1_000A1 Panjit International Inc. PJA3416-AU.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
32+0.67 EUR
100+0.33 EUR
500+0.27 EUR
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PJS6834_S2_00001 PJS6834_S2_00001 Panjit International Inc. PJS6834.pdf Description: MOSFET 2N-CH 20V 0.75A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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PJT7838_R1_00001 PJT7838_R1_00001 Panjit International Inc. PJT7838.pdf Description: MOSFET 2N-CH 50V 0.4A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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PJT7838_R1_00001 PJT7838_R1_00001 Panjit International Inc. PJT7838.pdf Description: MOSFET 2N-CH 50V 0.4A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 4767 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU_R2_000A1 Panjit International Inc. PJW7N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU_R2_000A1 Panjit International Inc. PJW7N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJT7800_R1_00001 PJT7800_R1_00001 Panjit International Inc. PJT7800.pdf Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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PJT7800_R1_00001 PJT7800_R1_00001 Panjit International Inc. PJT7800.pdf Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 16525 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
31+0.69 EUR
100+0.35 EUR
500+0.31 EUR
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PJX8802_R1_00001 PJX8802_R1_00001 Panjit International Inc. PJX8802.pdf Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
 Mindestbestellmenge: 40000 Stücke
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PJX8802_R1_00001 PJX8802_R1_00001 Panjit International Inc. PJX8802.pdf Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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PJX8806_R1_00001 PJX8806_R1_00001 Panjit International Inc. PJX8806.pdf Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
 Mindestbestellmenge: 56000 Stücke
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PJX8806_R1_00001 PJX8806_R1_00001 Panjit International Inc. PJX8806.pdf Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 1095 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
59+0.36 EUR
82+0.25 EUR
100+0.23 EUR
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PJT7802_R1_00001 PJT7802_R1_00001 Panjit International Inc. PJT7802.pdf Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJT7802_R1_00001 PJT7802_R1_00001 Panjit International Inc. PJT7802.pdf Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
31+0.69 EUR
100+0.35 EUR
500+0.31 EUR
1000+0.24 EUR
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PJS6806_S1_00001 PJS6806_S1_00001 Panjit International Inc. PJS6806.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJS6806_S1_00001 PJS6806_S1_00001 Panjit International Inc. PJS6806.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 2661 Stücke:
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21+1 EUR
28+0.76 EUR
100+0.46 EUR
500+0.43 EUR
1000+0.29 EUR
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PJL9410_R2_00001 Panjit International Inc. Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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PJL9410_R2_00001 Panjit International Inc. Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJS6816_S1_00001 PJS6816_S1_00001 Panjit International Inc. PJS6816.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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PJS6816_S1_00001 PJS6816_S1_00001 Panjit International Inc. PJS6816.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
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27+0.8 EUR
31+0.69 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.3 EUR
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PJX138K_R1_00001 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJX138K_R1_00001 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT7812_R1_00001 PJT7812_R1_00001 Panjit International Inc. PJT7812.pdf Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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SR24-AU_R1_000A1 SR24-AU.pdf
SR24-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 98pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3563 Stücke:
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17+1.26 EUR
28+0.77 EUR
100+0.5 EUR
500+0.38 EUR
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SR24_R1_00001 SR22_SERIES.pdf
SR24_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3600 Stücke:
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1800+0.092 EUR
3600+0.089 EUR
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SR24_R1_00001 SR22_SERIES.pdf
SR24_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 7030 Stücke:
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48+0.44 EUR
69+0.31 EUR
100+0.23 EUR
500+0.18 EUR
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BZT52-B4V7_R1_00001 BZT52-B2V4_SERIES.pdf
BZT52-B4V7_R1_00001
Hersteller: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±1.91%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 6000 Stücke:
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3000+0.08 EUR
6000+0.071 EUR
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BZT52-B4V7_R1_00001 BZT52-B2V4_SERIES.pdf
BZT52-B4V7_R1_00001
Hersteller: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±1.91%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 8606 Stücke:
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AnzahlPrivatkunde
48+0.44 EUR
52+0.4 EUR
100+0.23 EUR
500+0.13 EUR
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SM8S36A-AU_R2_000A1 SM8S14A-AU_SERIES.pdf
SM8S36A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S36A-AU_R2_000A1 SM8S14A-AU_SERIES.pdf
SM8S36A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 171 Stücke:
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3+8.77 EUR
10+5.77 EUR
50+4.49 EUR
100+4.07 EUR
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PEC1305S1Q_R1_00001 PEC1305S1Q.pdf
PEC1305S1Q_R1_00001
Hersteller: Panjit International Inc.
Description: ULTRA LOW CAPACITANCE ESD PROTEC
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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PEC1305S1Q_R1_00001 PEC1305S1Q.pdf
PEC1305S1Q_R1_00001
Hersteller: Panjit International Inc.
Description: ULTRA LOW CAPACITANCE ESD PROTEC
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMB200AS_R1_00001 P6SMB10AS_SERIES.pdf
P6SMB200AS_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+0.23 EUR
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ES1A_R1_00001 ES1A_SERIES.pdf
ES1A_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
auf Bestellung 1577 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
52+0.4 EUR
72+0.3 EUR
100+0.26 EUR
500+0.19 EUR
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PBHV9110DA-AU_R1_000A1 PBHV9110DA.pdf
PBHV9110DA-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PBHV9110DA-AU_R1_000A1 PBHV9110DA.pdf
PBHV9110DA-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Qualification: AEC-Q101
auf Bestellung 1192 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
74+0.29 EUR
119+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Hersteller: Panjit International Inc.
Description: TRANS NPN 50V 3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
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2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Hersteller: Panjit International Inc.
Description: TRANS NPN 50V 3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.25 W
auf Bestellung 7256 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.51 EUR
100+0.32 EUR
500+0.25 EUR
1000+0.21 EUR
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PJL9480_R2_00001 PJL9480.pdf
PJL9480_R2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Produkt ist nicht verfügbar
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PJL9480_R2_00001 PJL9480.pdf
PJL9480_R2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
14+1.58 EUR
100+1.11 EUR
500+0.89 EUR
1000+0.82 EUR
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PJQ5494_R2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
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PJQ5494_R2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
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PJD30N15_L2_00001 PJD30N15.pdf
PJD30N15_L2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Produkt ist nicht verfügbar
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PJD30N15_L2_00001 PJD30N15.pdf
PJD30N15_L2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
auf Bestellung 2966 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
13+1.67 EUR
100+1.17 EUR
500+0.94 EUR
1000+0.86 EUR
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PJD40N15_L2_00001 PJD40N15.pdf
PJD40N15_L2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
Produkt ist nicht verfügbar
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PJQ2800_R1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJQ2800_R1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJX138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJX138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJT7802_S1_00001 PJT7802.pdf
PJT7802_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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PJT7802_S1_00001 PJT7802.pdf
PJT7802_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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PJX8808_R1_00001 PJX8808.pdf
PJX8808_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Produkt ist nicht verfügbar
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PJX8808_R1_00001 PJX8808.pdf
PJX8808_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
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PJW7N04-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJW7N04-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJT138K_R1_00001 PJT138K.pdf
PJT138K_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 236mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.069 EUR
Mindestbestellmenge: 3000 Stücke
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PJT138K_R1_00001 PJT138K.pdf
PJT138K_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 236mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 9484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
102+0.2 EUR
196+0.11 EUR
Mindestbestellmenge: 72 Stücke
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PJA3416-AU_R1_000A1 PJA3416-AU.pdf
PJA3416-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJA3416-AU_R1_000A1 PJA3416-AU.pdf
PJA3416-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
32+0.67 EUR
100+0.33 EUR
500+0.27 EUR
1000+0.2 EUR
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PJS6834_S2_00001 PJS6834.pdf
PJS6834_S2_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.75A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.4A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.4A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 4767 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU.pdf
PJW7N06A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU.pdf
PJW7N06A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 16525 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
31+0.69 EUR
100+0.35 EUR
500+0.31 EUR
1000+0.24 EUR
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PJX8802_R1_00001 PJX8802.pdf
PJX8802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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PJX8802_R1_00001 PJX8802.pdf
PJX8802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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PJX8806_R1_00001 PJX8806.pdf
PJX8806_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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PJX8806_R1_00001 PJX8806.pdf
PJX8806_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 1095 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
59+0.36 EUR
82+0.25 EUR
100+0.23 EUR
500+0.17 EUR
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PJT7802_R1_00001 PJT7802.pdf
PJT7802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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PJT7802_R1_00001 PJT7802.pdf
PJT7802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
31+0.69 EUR
100+0.35 EUR
500+0.31 EUR
1000+0.24 EUR
Mindestbestellmenge: 22 Stücke
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PJS6806_S1_00001 PJS6806.pdf
PJS6806_S1_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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PJS6806_S1_00001 PJS6806.pdf
PJS6806_S1_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 2661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
28+0.76 EUR
100+0.46 EUR
500+0.43 EUR
1000+0.29 EUR
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PJL9410_R2_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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PJL9410_R2_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 4494 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
31+0.69 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.3 EUR
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PJX138K_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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PJX138K_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJT138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJT138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJT7812_R1_00001 PJT7812.pdf
PJT7812_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH