PJA3416-AU_R1_000A1 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.17 EUR |
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Technische Details PJA3416-AU_R1_000A1 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Grade: Automotive, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJA3416-AU_R1_000A1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PJA3416-AU_R1_000A1 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE M Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PJA3416-AU_R1_000A1 | Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJA3416-AU-R1-000A1 | Panjit | MOSFET SOT-23/MOS/SOT/NFET-20TMN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJA3416-AU_R1_000A1 |
|
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJA3416-AU_R1_000A1 |
|
Hersteller: Panjit
MOSFET 20V N-Channel Enhancement Mode MOSFET
MOSFET 20V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJA3416-AU-R1-000A1 |
Hersteller: Panjit
MOSFET SOT-23/MOS/SOT/NFET-20TMN
MOSFET SOT-23/MOS/SOT/NFET-20TMN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH