PJX8802_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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Technische Details PJX8802_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote PJX8802_R1_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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PJX8802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.7A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PJX8802_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563 Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJX8802_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJX8802_R1_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH