PJT7838_R1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 527+ | 0.14 EUR |
| 569+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.1 EUR |
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Technische Details PJT7838_R1_00001 PanJit Semiconductor
Description: 50V N-CHANNEL ENHANCEMENT MODE M, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Drain to Source Voltage (Vdss): 50V.
Weitere Produktangebote PJT7838_R1_00001 nach Preis ab 0.14 EUR bis 0.9 EUR
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PJT7838_R1_00001 | Panjit International Inc. |
Description: 50V N-CHANNEL ENHANCEMENT MODE MPower - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drain to Source Voltage (Vdss): 50V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7838_R1_00001 | Panjit |
MOSFETs 50V N-Channel Enhancement Mode MOSFET |
auf Bestellung 864 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7838_R1_00001 | Panjit International Inc. |
Description: 50V N-CHANNEL ENHANCEMENT MODE MRds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V |
auf Bestellung 7895 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT7838_R1_00001 |
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Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| PJT7838_R1_00001 |
![]() |
Hersteller: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFET
MOSFETs 50V N-Channel Enhancement Mode MOSFET
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.14 EUR |
| PJT7838_R1_00001 |
![]() |
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
auf Bestellung 7895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.22 EUR |



