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PJT7838_R1_00001 PanJit Semiconductor


PJT7838.pdf
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7648 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
417+0.17 EUR
527+0.14 EUR
569+0.13 EUR
596+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 417 Stücke
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Technische Details PJT7838_R1_00001 PanJit Semiconductor

Description: 50V N-CHANNEL ENHANCEMENT MODE M, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Drain to Source Voltage (Vdss): 50V.

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PJT7838_R1_00001 PJT7838_R1_00001 Panjit International Inc. PJT7838.pdf Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838_R1_00001 Panjit PJT7838.pdf MOSFETs 50V N-Channel Enhancement Mode MOSFET
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.74 EUR
10+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
3000+0.14 EUR
Mindestbestellmenge: 4 Stücke
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PJT7838_R1_00001 PJT7838_R1_00001 Panjit International Inc. PJT7838.pdf Description: 50V N-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
auf Bestellung 7895 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
27+0.67 EUR
100+0.42 EUR
500+0.29 EUR
1000+0.22 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
Hersteller: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFET
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.74 EUR
10+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
3000+0.14 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
auf Bestellung 7895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
27+0.67 EUR
100+0.42 EUR
500+0.29 EUR
1000+0.22 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH