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PJS6806_S1_00001

PJS6806_S1_00001 Panjit International Inc.

PJS6806.pdf
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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Technische Details PJS6806_S1_00001 Panjit International Inc.

Description: 30V N-CHANNEL ENHANCEMENT MODE M, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.25W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).

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PJS6806_S1_00001 PJS6806_S1_00001 Panjit International Inc. PJS6806.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJS6806_S1_00001 PJS6806_S1_00001 Panjit PJS6806-1871221.pdf MOSFET 30V N-Channel Enhancement Mode MOSFET
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PJS6806-S1-00001 Panjit MOSFET SOT23-6L/MOS/SOT/NFET-30TLMN
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PJS6806_S1_00001 PJS6806.pdf
PJS6806_S1_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJS6806_S1_00001 PJS6806-1871221.pdf
PJS6806_S1_00001
Hersteller: Panjit
MOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJS6806-S1-00001
Hersteller: Panjit
MOSFET SOT23-6L/MOS/SOT/NFET-30TLMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH