Technische Details 1.5SMC33CA-M3/9AT Vishay
Description: TVS DIODE 28.2VWM 45.7V DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 32.8A, Voltage - Reverse Standoff (Typ): 28.2V, Supplier Device Package: DO-214AB (SMCJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 31.4V, Voltage - Clamping (Max) @ Ipp: 45.7V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Part Status: Active. 
Weitere Produktangebote 1.5SMC33CA-M3/9AT
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        1.5SMC33CA-M3/9AT | Hersteller : Vishay General Semiconductor - Diodes Division | 
            
                         Description: TVS DIODE 28.2VWM 45.7V DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32.8A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active  | 
        
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        1.5SMC33CA-M3/9AT | Hersteller : Vishay General Semiconductor | 
            
                         ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,BIDIR,SMC TVS         | 
        
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        1.5SMC33CA-M3\9AT | Hersteller : Vishay | ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,BIDIR,SMC TVS | 
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        1.5SMC33CA-M3/9AT | Hersteller : VISHAY | 
            
                         Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.4÷34.7V; bidirectional; SMC; TransZorb® Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Manufacturer series: 1.5SMC Kind of package: 13 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated  | 
        
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