Produkte > IR > 110MT120KB

110MT120KB IR

110mt080kb.pdf
Hersteller: IR
05+
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 110MT120KB IR

Description: BRIDGE RECT 3P 1.2KV 110A MTK, Current - Reverse Leakage @ Vr: 10 mA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A, Current - Average Rectified (Io): 110 A, Voltage - Peak Reverse (Max): 1.2 kV, Supplier Device Package: MTK, Technology: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Diode Type: Three Phase, Mounting Type: Chassis Mount, Package / Case: MTK, Packaging: Bulk.

Weitere Produktangebote 110MT120KB

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
110MT120KB Vishay General Semiconductor - Diodes Division 110mt080kb.pdf Description: BRIDGE RECT 3P 1.2KV 110A MTK
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Average Rectified (Io): 110 A
Voltage - Peak Reverse (Max): 1.2 kV
Supplier Device Package: MTK
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MTK
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
110MT120KB 110mt080kb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 110A MTK
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Average Rectified (Io): 110 A
Voltage - Peak Reverse (Max): 1.2 kV
Supplier Device Package: MTK
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MTK
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH