15GN01CA-TB-E onsemi
Hersteller: onsemiDescription: RF TRANS NPN 8V 1.5GHZ 3-CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Supplier Device Package: 3-CP
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3643+ | 0.13 EUR |
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Technische Details 15GN01CA-TB-E onsemi
Description: RF TRANS NPN 8V 1.5GHZ 3-CP, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V, Frequency - Transition: 1.5GHz, Supplier Device Package: 3-CP.
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| 15GN01CA-TB-E | Hersteller : ON Semiconductor |
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auf Bestellung 5940 Stücke: Lieferzeit 10-14 Tag (e) |
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15GN01CA-TB-E | Hersteller : onsemi |
Description: RF TRANS NPN 8V 1.5GHZ 3-CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V Frequency - Transition: 1.5GHz Supplier Device Package: 3-CP |
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