15KPA110CAe3/TR13 MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Bidirectional TVS THT diodes
Description: Diode: TVS; 122.9÷134.5V; 84.5A; bidirectional; ±5%; P600; 15kW
Max. off-state voltage: 110V
Semiconductor structure: bidirectional
Max. forward impulse current: 84.5A
Breakdown voltage: 122.9...134.5V
Leakage current: 2µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 15kW
Case: P600
Tolerance: ±5%
Anzahl je Verpackung: 1 Stücke
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Technische Details 15KPA110CAe3/TR13 MICROCHIP TECHNOLOGY
Description: TVS DIODE 110VWM 178.6VC P600, Packaging: Tape & Reel (TR), Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 84.5A, Voltage - Reverse Standoff (Typ): 110V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 122.9V, Voltage - Clamping (Max) @ Ipp: 178.6V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No, Part Status: Active.
Weitere Produktangebote 15KPA110CAe3/TR13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 15KPA110CAe3/TR13 | Hersteller : Microchip Technology |
Description: TVS DIODE 110VWM 178.6VC P600 Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 84.5A Voltage - Reverse Standoff (Typ): 110V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 122.9V Voltage - Clamping (Max) @ Ipp: 178.6V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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15KPA110CAe3/TR13 | Hersteller : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 15000W, Stand-off voltage = 110V, +/- 5%, Bi-dir |
Produkt ist nicht verfügbar |
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| 15KPA110CAe3/TR13 | Hersteller : MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 122.9÷134.5V; 84.5A; bidirectional; ±5%; P600; 15kW Max. off-state voltage: 110V Semiconductor structure: bidirectional Max. forward impulse current: 84.5A Breakdown voltage: 122.9...134.5V Leakage current: 2µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 15kW Case: P600 Tolerance: ±5% |
Produkt ist nicht verfügbar |