18N20 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.55 EUR |
| 11+ | 1.62 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.79 EUR |
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Technische Details 18N20 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 65.8W; TO252, Case: TO252, Mounting: SMD, Drain current: 18A, Gate-source voltage: ±20V, Power dissipation: 65.8W, Drain-source voltage: 200V, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: Planar, Polarisation: unipolar, Gate charge: 18nC.
Weitere Produktangebote 18N20 nach Preis ab 0.55 EUR bis 121.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| 18N20 | Hersteller : GOFORD Semiconductor |
N-CH 200V 18A 0.136OhmMAX at 10V TO-252 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| 18N-20 | Hersteller : Spectrum Control | 18N-20 |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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18N20 | Hersteller : Goford Semiconductor |
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V |
Produkt ist nicht verfügbar |
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| 18N-20 | Hersteller : Spectrum Control |
RF Connectors / Coaxial Connectors |
Produkt ist nicht verfügbar |
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| 18N20 | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 65.8W; TO252 Case: TO252 Mounting: SMD Drain current: 18A Gate-source voltage: ±20V Power dissipation: 65.8W Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: Planar Polarisation: unipolar Gate charge: 18nC |
Produkt ist nicht verfügbar |