1N1612R Microchip Technology

Description: DIODE GEN PURP 50V 7A DO4, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: DO-4 (DO-203AA), Current - Average Rectified (Io): 7A, Technology: Standard, Reverse Polarity, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.