1N3070UR-1 Microchip Technology

Description: DIODE GEN PURP 175V 100MA DO7, Current - Reverse Leakage @ Vr: 100 nA @ 175 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 175 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-7, Current - Average Rectified (Io): 100mA, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AA, DO-7, Axial, Packaging: Bulk.