1N3660 Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE GEN PURP 100V 35A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Press Fit
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N3660 Microchip Technology
Description: DIODE GEN PURP 100V 35A DO21, Packaging: Bulk, Package / Case: DO-208AA, Mounting Type: Press Fit, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-21, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote 1N3660
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
1N3660 | Hersteller : Microchip Technology |
Rectifiers Std Rectifier |
Produkt ist nicht verfügbar |