1N3661 Microchip Technology

Description: DIODE GEN PURP 200V 35A DO21, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-21, Current - Average Rectified (Io): 35A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Press Fit, Package / Case: DO-208AA, Packaging: Bulk.