1N3957GP-E3/73 Vishay General Semiconductor
auf Bestellung 5979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.34 EUR |
| 6000+ | 0.32 EUR |
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Technische Details 1N3957GP-E3/73 Vishay General Semiconductor
Description: DIODE GEN PURP 1KV 1A DO204AL, Packaging: Tape & Box (TB), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.
Weitere Produktangebote 1N3957GP-E3/73
| Foto | Bezeichnung | Hersteller | Beschreibung |
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1N3957GP-E3/73 | Hersteller : Vishay |
 Diode Switching 1KV 1A 2-Pin DO-41 Ammo |
Produkt ist nicht verfügbar |
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1N3957GP-E3/73 | Hersteller : Vishay |
Diode Switching 1KV 1A 2-Pin DO-41 Ammo |
Produkt ist nicht verfügbar |
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1N3957GP-E3/73 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
Produkt ist nicht verfügbar |