Produkte > RECTRON USA > 1N4007-F
1N4007-F

1N4007-F Rectron USA

1n4001-1n4007.pdf
Hersteller: Rectron USA
Description: DIODE GEN PURP 1A DO41
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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Technische Details 1N4007-F Rectron USA

Description: DIODE GEN PURP 1A DO41, Current - Reverse Leakage @ Vr: 200 nA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-41, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Tape & Reel (TR).