1N4148WT,H3F(B Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE STANDARD 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 3640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 136+ | 0.13 EUR |
| 220+ | 0.08 EUR |
| 500+ | 0.058 EUR |
| 1000+ | 0.051 EUR |
| 2000+ | 0.045 EUR |
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Technische Details 1N4148WT,H3F(B Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA ESC, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 ns, Technology: Standard, Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: ESC, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 200 nA @ 80 V.
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1N4148WT,H3F(B | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 100V 250MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
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