1N4153-1 Microchip Technology
Hersteller: Microchip Technology
Diodes - General Purpose, Power, Switching Signal or Computer Diode
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Technische Details 1N4153-1 Microchip Technology
Description: DIODE GEN PURP 50V 150MA DO35, Current - Reverse Leakage @ Vr: 50 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-35, Current - Average Rectified (Io): 150mA, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bulk.
Weitere Produktangebote 1N4153-1 nach Preis ab 1.83 EUR bis 1.95 EUR
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1N4153-1 | Microchip Technology |
Description: DIODE GEN PURP 50V 150MA DO35 Current - Reverse Leakage @ Vr: 50 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-35 Current - Average Rectified (Io): 150mA Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Bulk |
auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4153-1 | Microchip / Microsemi |
Diodes - General Purpose, Power, Switching Switching Diode |
auf Bestellung 608 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1N4153-1 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 150MA DO35
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 150mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Description: DIODE GEN PURP 50V 150MA DO35
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 150mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.95 EUR |
| 100+ | 1.83 EUR |
| 1N4153-1 |
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Hersteller: Microchip / Microsemi
Diodes - General Purpose, Power, Switching Switching Diode
Diodes - General Purpose, Power, Switching Switching Diode
auf Bestellung 608 Stücke:
Lieferzeit 10-14 Tag (e)