1N4305-1E3 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 2 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N4305-1E3 Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 mA, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-204AH (DO-35), Current - Average Rectified (Io): 200mA, Technology: Standard, Reverse Recovery Time (trr): 2 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bulk.
Weitere Produktangebote 1N4305-1E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 1N4305-1E3 | Hersteller : Microchip Technology | Small Signal Switching Diodes Signal or Computer Diode |
Produkt ist nicht verfügbar |