1N4449/TR Microchip Technology

Description: DIODE GEN PURP 75V 200MA DO35, Current - Reverse Leakage @ Vr: 25 nA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA, Voltage - DC Reverse (Vr) (Max): 75 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-35, Current - Average Rectified (Io): 200mA, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Tape & Reel (TR).