Technische Details 1N4449 MICROSEMI
Description: DIODE GEN PURP 75V 200MA DO35, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Current - Reverse Leakage @ Vr: 25 nA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA, Voltage - DC Reverse (Vr) (Max): 75 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-35, Current - Average Rectified (Io): 200mA, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bulk, Technology: Standard, Reverse Recovery Time (trr): 4 ns.
Weitere Produktangebote 1N4449
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
1N4449 | Microchip Technology |
 Description: DIODE GEN PURP 75V 200MA DO35Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 25 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Voltage - DC Reverse (Vr) (Max): 75 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-35 Current - Average Rectified (Io): 200mA Package / Case: DO-204AH, DO-35, Axial Packaging: Bulk Technology: Standard Reverse Recovery Time (trr): 4 ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 794 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
1N4449 | Microchip Technology |
Diodes - General Purpose, Power, Switching Signal or Computer Diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N4449 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO35
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Description: DIODE GEN PURP 75V 200MA DO35
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 794 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N4449 |
|
Hersteller: Microchip Technology
Diodes - General Purpose, Power, Switching Signal or Computer Diode
Diodes - General Purpose, Power, Switching Signal or Computer Diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH