1N4529R Microchip Technology

Description: DIODE GEN PURP 1KV 40A DO5, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: DO-5 (DO-203AB), Current - Average Rectified (Io): 40A, Technology: Standard, Reverse Polarity, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Stud Mount, Package / Case: DO-203AB, DO-5, Stud, Packaging: Bulk.