1N4947GP-E3/73 Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 3+ | 1.09 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
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Technische Details 1N4947GP-E3/73 Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO204AL, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-204AL (DO-41), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 250 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Cut Tape (CT).
Weitere Produktangebote 1N4947GP-E3/73
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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1N4947GP-E3/73 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 1A DO204ALCurrent - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N4947GP-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH