auf Bestellung 6531 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 786+ | 0.18 EUR |
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Technische Details 1N5059-TR Vishay
Category: THT universal diodes, Description: Diode: rectifying; THT; 200V; 2A; 10 inch reel; Ifsm: 50A; SOD57, Case: SOD57, Mounting: THT, Kind of package: 10 inch reel, Capacitance: 40pF, Reverse recovery time: 4µs, Leakage current: 0.1mA, Max. forward voltage: 1.15V, Load current: 2A, Max. forward impulse current: 50A, Quantity in set/package: 5000pcs., Max. off-state voltage: 200V, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Type of diode: rectifying, Semiconductor structure: single diode, Anzahl je Verpackung: 15000 Stücke.
Weitere Produktangebote 1N5059-TR nach Preis ab 0.05 EUR bis 0.58 EUR
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1N5059-TR | Hersteller : Vishay |
 Diode Switching 200V 2A 2-Pin SOD-57 T/R |
auf Bestellung 6531 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5059-TR | Hersteller : Vishay |
Diode Switching 200V 2A 2-Pin SOD-57 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5059-TR | Hersteller : Vishay |
Diode Switching 200V 2A 2-Pin SOD-57 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5059TR | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5059-TR | Hersteller : Vishay |
Diode Switching 200V 2A 2-Pin SOD-57 T/R |
auf Bestellung 8690 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5059-TR | Hersteller : Vishay |
Diode Switching 200V 2A 2-Pin SOD-57 T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5059TR | Hersteller : Vishay Semiconductors |
Rectifiers RECT 200V 2A SOD-57 |
auf Bestellung 19115 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5059TR | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 41947 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5059-TR | Hersteller : Vishay |
Diode Switching 200V 2A 2-Pin SOD-57 T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5059TR | Hersteller : Vishay |
Rectifier Diode Switching 200V 2A 4000ns 2-Pin SOD-57 T/R |
Produkt ist nicht verfügbar |
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| 1N5059TR | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; 10 inch reel; Ifsm: 50A; SOD57 Case: SOD57 Mounting: THT Kind of package: 10 inch reel Capacitance: 40pF Reverse recovery time: 4µs Leakage current: 0.1mA Max. forward voltage: 1.15V Load current: 2A Max. forward impulse current: 50A Quantity in set/package: 5000pcs. Max. off-state voltage: 200V Features of semiconductor devices: avalanche breakdown effect; glass passivated Type of diode: rectifying Semiconductor structure: single diode Anzahl je Verpackung: 15000 Stücke |
Produkt ist nicht verfügbar |
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| 1N5059TR | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; 10 inch reel; Ifsm: 50A; SOD57 Case: SOD57 Mounting: THT Kind of package: 10 inch reel Capacitance: 40pF Reverse recovery time: 4µs Leakage current: 0.1mA Max. forward voltage: 1.15V Load current: 2A Max. forward impulse current: 50A Quantity in set/package: 5000pcs. Max. off-state voltage: 200V Features of semiconductor devices: avalanche breakdown effect; glass passivated Type of diode: rectifying Semiconductor structure: single diode |
Produkt ist nicht verfügbar |