| Anzahl | Privatkunde |
|---|---|
| 262+ | 0.67 EUR |
| 275+ | 0.62 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.52 EUR |
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Lieferzeit:
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262 Stücke
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Technische Details 1N5061TAP Vishay
Description: DIODE AVALANCHE 600V 2A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Capacitance @ Vr, F: 40pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
Weitere Produktangebote 1N5061TAP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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1N5061TAP | VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 4us Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: SOD57 Mounting: THT Max. forward voltage: 1.15V Max. forward impulse current: 50A Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Reverse recovery time: 4µs Leakage current: 0.1mA Capacitance: 40pF |
auf Bestellung 4422 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5061TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 4us
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SOD57
Mounting: THT
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Reverse recovery time: 4µs
Leakage current: 0.1mA
Capacitance: 40pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 4us
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SOD57
Mounting: THT
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Reverse recovery time: 4µs
Leakage current: 0.1mA
Capacitance: 40pF
auf Bestellung 4422 Stücke:
Lieferzeit 14-21 Tag (e)