| Anzahl | Preis |
|---|---|
| 970+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 1034+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5062TAP Vishay
Description: DIODE AVALANCHE 800V 2A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Capacitance @ Vr, F: 40pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Weitere Produktangebote 1N5062TAP nach Preis ab 0.11 EUR bis 3.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1N5062TAP | Vishay |
 Diode Switching 800V 2A 2-Pin SOD-57 Ammo |
auf Bestellung 18371 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
1N5062TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Case: SOD57 Mounting: THT Kind of package: Ammo Pack Capacitance: 40pF Reverse recovery time: 4µs Leakage current: 0.1mA Max. forward voltage: 1.15V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 0.8kV Features of semiconductor devices: avalanche breakdown effect; glass passivated Type of diode: rectifying Semiconductor structure: single diode |
auf Bestellung 1364 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
1N5062TAP | Vishay |
Diode Switching 800V 2A 2-Pin SOD-57 Ammo |
auf Bestellung 1364 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
1N5062TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
1N5062TAP | Vishay Semiconductors |
Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM |
auf Bestellung 13932 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
1N5062TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 8564 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 1N5062TAP |
|
Hersteller: Vishay
Diode Switching 800V 2A 2-Pin SOD-57 Ammo
Diode Switching 800V 2A 2-Pin SOD-57 Ammo
auf Bestellung 18371 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 942+ | 0.16 EUR |
| 956+ | 0.15 EUR |
| 970+ | 0.14 EUR |
| 986+ | 0.13 EUR |
| 1017+ | 0.12 EUR |
| 1034+ | 0.11 EUR |
| 1N5062TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Case: SOD57
Mounting: THT
Kind of package: Ammo Pack
Capacitance: 40pF
Reverse recovery time: 4µs
Leakage current: 0.1mA
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Case: SOD57
Mounting: THT
Kind of package: Ammo Pack
Capacitance: 40pF
Reverse recovery time: 4µs
Leakage current: 0.1mA
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1364 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 200+ | 0.36 EUR |
| 224+ | 0.32 EUR |
| 242+ | 0.3 EUR |
| 254+ | 0.28 EUR |
| 281+ | 0.25 EUR |
| 1N5062TAP |
|
Hersteller: Vishay
Diode Switching 800V 2A 2-Pin SOD-57 Ammo
Diode Switching 800V 2A 2-Pin SOD-57 Ammo
auf Bestellung 1364 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 281+ | 0.53 EUR |
| 313+ | 0.47 EUR |
| 1N5062TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.99 EUR |
| 10000+ | 0.93 EUR |
| 1N5062TAP |
|
Hersteller: Vishay Semiconductors
Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM
Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM
auf Bestellung 13932 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.66 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.08 EUR |
| 1N5062TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 8564 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.66 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.17 EUR |
| 2000+ | 1.14 EUR |