| Anzahl | Privatkunde |
|---|---|
| 970+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| 1034+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5062TAP Vishay
Description: DIODE AVALANCHE 800V 2A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Capacitance @ Vr, F: 40pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Weitere Produktangebote 1N5062TAP nach Preis ab 0.13 EUR bis 10.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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1N5062TAP | Vishay |
 Diode Switching 800V 2A 2-Pin SOD-57 Ammo |
auf Bestellung 18371 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5062TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5062TAP | Vishay Semiconductors |
Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM |
auf Bestellung 13932 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5062TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 8364 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5062TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 4us Type of diode: rectifying Mounting: THT Semiconductor structure: single diode Case: SOD57 Max. off-state voltage: 0.8kV Load current: 2A Kind of package: Ammo Pack Leakage current: 0.1mA Capacitance: 40pF Reverse recovery time: 4µs Max. forward impulse current: 50A Max. forward voltage: 1.15V Features of semiconductor devices: avalanche breakdown effect; glass passivated |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5062TAP |
|
Hersteller: Vishay
Diode Switching 800V 2A 2-Pin SOD-57 Ammo
Diode Switching 800V 2A 2-Pin SOD-57 Ammo
auf Bestellung 18371 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 942+ | 0.19 EUR |
| 956+ | 0.18 EUR |
| 970+ | 0.17 EUR |
| 986+ | 0.15 EUR |
| 1017+ | 0.14 EUR |
| 1034+ | 0.13 EUR |
| 1N5062TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.2 EUR |
| 10000+ | 1.13 EUR |
| 1N5062TAP |
|
Hersteller: Vishay Semiconductors
Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM
Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM
auf Bestellung 13932 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.36 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.15 EUR |
| 1N5062TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 8364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.44 EUR |
| 10+ | 2.84 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.42 EUR |
| 2000+ | 1.38 EUR |
| 1N5062TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 4us
Type of diode: rectifying
Mounting: THT
Semiconductor structure: single diode
Case: SOD57
Max. off-state voltage: 0.8kV
Load current: 2A
Kind of package: Ammo Pack
Leakage current: 0.1mA
Capacitance: 40pF
Reverse recovery time: 4µs
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 50A; SOD57; Ammo Pack; 4us
Type of diode: rectifying
Mounting: THT
Semiconductor structure: single diode
Case: SOD57
Max. off-state voltage: 0.8kV
Load current: 2A
Kind of package: Ammo Pack
Leakage current: 0.1mA
Capacitance: 40pF
Reverse recovery time: 4µs
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
Features of semiconductor devices: avalanche breakdown effect; glass passivated
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 10.64 EUR |