1N5250B R0G Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 8+ | 0.35 EUR |
| 12+ | 0.25 EUR |
| 100+ | 0.14 EUR |
| 1000+ | 0.074 EUR |
| 2500+ | 0.062 EUR |
| 10000+ | 0.046 EUR |
| 20000+ | 0.04 EUR |
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Technische Details 1N5250B R0G Taiwan Semiconductor
Description: DIODE ZENER 20V 500MW DO35, Current - Reverse Leakage @ Vr: 100 nA @ 15 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA, Power - Max: 500 mW, Supplier Device Package: DO-35, Impedance (Max) (Zzt): 25 Ohms, Voltage - Zener (Nom) (Vz): 20 V, Operating Temperature: 200°C (TJ), Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Tolerance: ±5%, Packaging: Tape & Reel (TR).
Weitere Produktangebote 1N5250B R0G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5250B R0G | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 20V 500MW DO35Current - Reverse Leakage @ Vr: 100 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Supplier Device Package: DO-35 Impedance (Max) (Zzt): 25 Ohms Voltage - Zener (Nom) (Vz): 20 V Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
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