Produkte > MICROSEMI CORPORATION > 1N5259B (DO-35)
1N5259B (DO-35)

1N5259B (DO-35) Microsemi Corporation

1N5221 - 1N5281B, e3 DO-35.pdf
Hersteller: Microsemi Corporation
Description: DIODE ZENER 39V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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Technische Details 1N5259B (DO-35) Microsemi Corporation

Description: DIODE ZENER 39V 500MW DO35, Current - Reverse Leakage @ Vr: 100 nA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA, Power - Max: 500 mW, Supplier Device Package: DO-35, Impedance (Max) (Zzt): 80 Ohms, Voltage - Zener (Nom) (Vz): 39 V, Operating Temperature: -65°C ~ 175°C, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Tolerance: ±5%, Packaging: Bulk.