Technische Details 1N5408GHA0G Taiwan Semiconductor
Description: DIODE GEN PURP 3A DO201AD, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Box (TB), Voltage - DC Reverse (Vr) (Max): 1000 V, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote 1N5408GHA0G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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1N5408GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO201AD Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Voltage - DC Reverse (Vr) (Max): 1000 V Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
1N5408GHA0G | Taiwan Semiconductor | Rectifiers 3A, 1000V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5408GHA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 1000 V
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE GEN PURP 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 1000 V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5408GHA0G |
Hersteller: Taiwan Semiconductor
Rectifiers 3A, 1000V, Standard Recovery Rectifier
Rectifiers 3A, 1000V, Standard Recovery Rectifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH