1N5408GHA0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 3A DO201AD, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Box (TB), Voltage - DC Reverse (Vr) (Max): 1000 V, Qualification: AEC-Q101, Grade: Automotive.