auf Bestellung 3784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.67 EUR |
10+ | 0.52 EUR |
100+ | 0.31 EUR |
500+ | 0.29 EUR |
1200+ | 0.2 EUR |
2400+ | 0.18 EUR |
9600+ | 0.15 EUR |
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Technische Details 1N5408T-G Comchip Technology
Description: DIODE GEN PURP 1KV 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-27, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote 1N5408T-G nach Preis ab 0.18 EUR bis 0.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5408T-G | Hersteller : Comchip Technology |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408T-G | Hersteller : Comchip Technology | Diode 1KV 3A 2-Pin DO-27 T/R |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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