Technische Details 1N5417E3 Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: B, Axial, Packaging: Bulk.
Weitere Produktangebote 1N5417E3
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1N5417E3 | Hersteller : Microchip Technology |
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1N5417E3 | Hersteller : Microchip Technology |
Description: DIODE STANDARD 200V 3A B AXIAL Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: B, Axial Packaging: Bulk |
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1N5417E3 | Hersteller : Microchip / Microsemi |
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1N5417E3 | Hersteller : Microchip Technology |
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