1N5551USE3 Microchip Technology

Description: DIODE GEN PURP 400V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.