1N5553/TR Microchip Technology
Hersteller: Microchip Technology
Description: STD RECTIFIER
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5553/TR Microchip Technology
Description: DIODE GENERAL PURPOSE TH, Packaging: Tape & Box (TB), Package / Case: R-4, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: GPR-4AM, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Weitere Produktangebote 1N5553/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 1N5553 TR | Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Tape & Box (TB) Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
1N5553/TR | Microchip Technology |
Rectifiers Rectifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5553 TR |
Hersteller: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5553/TR |
|
Hersteller: Microchip Technology
Rectifiers Rectifier
Rectifiers Rectifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH