Technische Details 1N5557 Microchip Technology
Category: Unidirectional TVS THT diodes, Description: Diode: TVS; 1.5kW; 54V; 19A; unidirectional; DO13, Case: DO13, Mounting: THT, Semiconductor structure: unidirectional, Max. forward impulse current: 19A, Leakage current: 5µA, Max. off-state voltage: 49V, Breakdown voltage: 54V, Type of diode: TVS, Peak pulse power dissipation: 1.5kW.
Weitere Produktangebote 1N5557
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
1N5557 | Hersteller : Microchip Technology |
 TVS Diode Single Uni-Dir 49V 1.5KW 2-Pin DO-13 Bag |
Produkt ist nicht verfügbar |
|
| 1N5557 | Hersteller : Sensitron Semiconductors |
Diode TVS Single Uni-Dir 49V 1.5KW 2-Pin DO-13 |
Produkt ist nicht verfügbar |
||
 |
1N5557 | Hersteller : Microchip Technology |
Diode TVS Single Uni-Dir 49V 1.5KW 2-Pin DO-13 Bag |
Produkt ist nicht verfügbar |
|
| 1N5557 | Hersteller : MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 54V; 19A; unidirectional; DO13 Case: DO13 Mounting: THT Semiconductor structure: unidirectional Max. forward impulse current: 19A Leakage current: 5µA Max. off-state voltage: 49V Breakdown voltage: 54V Type of diode: TVS Peak pulse power dissipation: 1.5kW |
Produkt ist nicht verfügbar |