1N5615US/TR Microchip Technology

Description: DIODE GEN PURP 200V 1A D-5A, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 12V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V.