1N5711E3

1N5711E3 Microchip Technology


Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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Technische Details 1N5711E3 Microchip Technology

Description: DIODE SCHOTTKY 70V 33MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 33mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 70 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA, Current - Reverse Leakage @ Vr: 200 nA @ 50 V.

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1N5711E3 1N5711E3 Hersteller : Microchip Technology LDS_0040_r4-1593817.pdf Schottky Diodes & Rectifiers Small-Signal Schottky
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