
1N5711UB/TR Microchip Technology

Description: DIODE SCHOTTKY 50V 33MA UB
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 37.17 EUR |
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Technische Details 1N5711UB/TR Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA UB, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 33mA, Supplier Device Package: UB, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA, Current - Reverse Leakage @ Vr: 200 nA @ 50 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5711UB/TR | Hersteller : Microchip Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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1N5711UB/TR | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |