Technische Details 1N5806E3 Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V.
Weitere Produktangebote 1N5806E3 nach Preis ab 7.38 EUR bis 9.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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1N5806E3 | Microchip Technology |
Diode Switching 150V 2.5A 2-Pin Case A Bag |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5806E3 | Microchip Technology |
Rectifiers 160V 1A Lead-Free UFR,FRR THT |
auf Bestellung 223 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5806E3 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIALPackaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 1N5806E3 |
![]() |
Hersteller: Microchip Technology
Diode Switching 150V 2.5A 2-Pin Case A Bag
Diode Switching 150V 2.5A 2-Pin Case A Bag
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 7.38 EUR |
| 1N5806E3 |
![]() |
Hersteller: Microchip Technology
Rectifiers 160V 1A Lead-Free UFR,FRR THT
Rectifiers 160V 1A Lead-Free UFR,FRR THT
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.52 EUR |
| 100+ | 7.92 EUR |
| 1N5806E3 |
![]() |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.2 EUR |
| 100+ | 8.56 EUR |



