1N5811U4 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 525 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: U4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 6A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 525 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: U4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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Technische Details 1N5811U4 Microchip Technology
Description: DIODE GEN PURP 150V 6A U4, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 525 µs, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: U4, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V.
Weitere Produktangebote 1N5811U4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 1N5811U4 | Hersteller : Microchip Technology | Zener Diodes |
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