1N5811U4 Microchip Technology

Description: DIODE GEN PURP 150V 6A U4, Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: U4, Current - Average Rectified (Io): 6A, Technology: Standard, Reverse Recovery Time (trr): 525 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Bulk, Current - Reverse Leakage @ Vr: 5 µA @ 150 V.