1N5811US/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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Technische Details 1N5811US/TR Microchip Technology
Description: DIODE STANDARD 150V 3A B SQMELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V.
Weitere Produktangebote 1N5811US/TR nach Preis ab 10.39 EUR bis 13.74 EUR
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1N5811US/TR | Microchip Technology |
Description: DIODE STANDARD 150V 3A B SQMELF Packaging: Cut Tape (CT) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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1N5811US/TR | Microchip Technology |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5811US/TR | Microchip Technology |
Diode Switching 150V 6A 2-Pin MELF-B T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5811US/TR | Microchip Technology |
Diode Switching 150V 6A 2-Pin MELF-B T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5811US/TR |
|
Hersteller: Microchip Technology
Diode Switching 150V 6A 2-Pin MELF-B T/R
Diode Switching 150V 6A 2-Pin MELF-B T/R
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.28 EUR |
| 25+ | 11.64 EUR |
| 50+ | 11.01 EUR |
| 100+ | 10.39 EUR |
| 1N5811US/TR |
|
Hersteller: Microchip Technology
Diode Switching 150V 6A 2-Pin E-MELF T/R
Diode Switching 150V 6A 2-Pin E-MELF T/R
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 12.39 EUR |
| 126+ | 11.25 EUR |
| 1N5811US/TR |
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Hersteller: Microchip Technology
Diode Switching 150V 6A 2-Pin MELF-B T/R
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auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.55 EUR |
| 25+ | 12.08 EUR |
| 50+ | 11.63 EUR |
| 100+ | 11.26 EUR |
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Hersteller: Microchip Technology
Rectifiers 150V 3A UFR,FRR SQ SMT TR
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auf Bestellung 213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.73 EUR |
| 126+ | 11.83 EUR |
| 1N5811US/TR |
|
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.74 EUR |
| 1N5811US/TR |
|
Hersteller: Microchip Technology
Diode Switching 150V 6A 2-Pin E-MELF T/R
Diode Switching 150V 6A 2-Pin E-MELF T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5811US/TR |
|
Hersteller: Microchip Technology
Diode Switching 150V 6A 2-Pin MELF-B T/R
Diode Switching 150V 6A 2-Pin MELF-B T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5811US/TR |
|
Hersteller: Microchip Technology
Diode Switching 150V 6A 2-Pin MELF-B T/R
Diode Switching 150V 6A 2-Pin MELF-B T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)