Technische Details 1N5811USE3/TR Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A.
Weitere Produktangebote 1N5811USE3/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| 1N5811USE3/TR | Hersteller : Microchip Technology |
 Switching Diode Rectifier |
Produkt ist nicht verfügbar |
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1N5811USE3/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
Produkt ist nicht verfügbar |
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1N5811USE3/TR | Hersteller : Microchip Technology |
Rectifiers Rectifier |
Produkt ist nicht verfügbar |