1N5813R Microchip Technology

Description: DIODE GEN PURP 75V 20A DO203AA, Current - Reverse Leakage @ Vr: 10 µA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A, Voltage - DC Reverse (Vr) (Max): 75 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-203AA (DO-4), Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 300pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.