1N5818T/R EIC SEMICONDUCTOR INC.
Hersteller: EIC SEMICONDUCTOR INC.Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.26 EUR |
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Technische Details 1N5818T/R EIC SEMICONDUCTOR INC.
Description: DIODE SCHOTTKY 30V 1A DO41, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 110pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-41, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 mA @ 30 V.
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