Technische Details 1N5822US Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 40 V.
Weitere Produktangebote 1N5822US nach Preis ab 129.77 EUR bis 155.64 EUR
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1N5822US | Microchip Technology |
 Description: DIODE SCHOTTKY 40V 3A B SQ-MELFPackaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
auf Bestellung 160 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5822US | Microchip Technology |
Diode Schottky 40V 3A 2-Pin B-MELF Bag |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5822US | Microchip Technology |
Diode Schottky 40V 3A 2-Pin B-MELF Bag |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5822US |
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Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 139.75 EUR |
| 100+ | 129.77 EUR |
| 1N5822US |
|
Hersteller: Microchip Technology
Diode Schottky 40V 3A 2-Pin B-MELF Bag
Diode Schottky 40V 3A 2-Pin B-MELF Bag
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 155.64 EUR |
| 5+ | 151.64 EUR |
| 10+ | 146.91 EUR |
| 20+ | 143.28 EUR |
| 50+ | 140.75 EUR |
| 1N5822US |
|
Hersteller: Microchip Technology
Diode Schottky 40V 3A 2-Pin B-MELF Bag
Diode Schottky 40V 3A 2-Pin B-MELF Bag
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)